VS-HFA04SD60S-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-16
1
Document Number: 93473
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 4 A
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Guaranteed avalanche
• Specified at operating temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
4 A
V
R
600 V
V
F
at I
F
1.4 V
t
rr
typ. 17 ns
T
J
max. 150 °C
Diode variation Single die
Anode
1
3
2, 4
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
RRM
600 V
Maximum continuous forward current I
F(AV)
T
C
= 100 °C 4
ASingle pulse forward current I
FSM
25
Repetitive peak forward current I
FRM
T
C
= 116 °C 16
Maximum power dissipation P
D
T
C
= 100 °C 10 W
Operating junction and storage temperatures T
J
, T
Stg
-55 to +150 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage
See fig. 1
V
F
I
F
= 4 A - 1.5 1.8
I
F
= 8 A - 1.8 2.2
I
F
= 4 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
R
V
R
= V
R
rated - 0.17 3.0
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 44 300
Junction capacitance C
T
V
R
= 200 V - 4 8 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
