BSL207NH6327XTSA1

P1-P3 P4-P6 P7-P9

BSL207N

OptiMOS

™

2 Small-Signal-Transistor

Features

• Dual N-channel

• Enhancement mode

• Super Logic level (2.5V rated)

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen free according to IEC61249-2-21

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter

1)

Symbol Conditions Unit

Continuous drain current

I

D

T

A

=25 °C

2.1 A

T

A

=70 °C

1.7

Pulsed drain current

I

D,pulse

T

A

=25 °C

8.4

Avalanche energy, single pulse

E

AS

I

D

=2.1A, R

GS

=25 W

10.8 mJ

Reverse diode dv/dt dv /dt

I

D

=2.1A, V

DS

=16 V,

di/dt=200 A/µs,

T

j,max

=150 °C

6 kV/µs

Gate source voltage

V

GS

±12 V

Power dissipation

1)

P

tot

T

A

=25 °C

W

Operating and storage temperature

T

j

, T

stg

-55 ... 150 °C

ESD Class

JESD22-A114 -HBM 0 (<250V)

Soldering Temperature 260 °C

IEC climatic category; DIN IEC 68-1 55/150/56

1)

Remark: one of both transistors in operation

Value

0.5

PG-TSOP6

1

2

3

4

5

6

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSL207N

TSOP-6

H6327: 3000 pcs/ reel

sPL

Yes

Non dry

V

DS

20

V

R

DS(on),max

V

GS

=4.5 V

70

mW

V

GS

=2.5 V

110

I

D

2.1

A

Product Summary

Rev 2.3 page 1 2013-11-06

BSL207N

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance,

junction - ambient

R

thJA

minimal footprint

2)

- - 250 K/W

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 µA

20 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=11 µA

0.7 0.95 1.2

Drain-source leakage current

I

DSS

V

DS

=20 V, V

GS

=0 V,

T

j

=25 °C

- - 1

mA

V

DS

=20 V, V

GS

=0 V,

T

j

=150 °C

- - 100

Gate-source leakage current

I

GSS

V

GS

=12 V, V

DS

=0 V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=2.5V, I

D

=1.7 A

- 81 110

mW

V

GS

=4.5 V, I

D

=2.1 A

- 58 70

Transconductance

g

fs

|V

DS

|>2|I

D

|R

DS(on)max

,

I

D

=1.7 A

- 7 - S

Values

2)

Performed on a 40mm

2

FR4 PCB. The traces are1mm wide, 70μm thick and 20mm long; they are present on both

sides of the PCB.

Rev 2.3 page 2 2013-11-06

BSL207N

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance

C

iss

- 315 419 pF

Output capacitance

C

oss

- 114 152

Reverse transfer capacitance

C

rss

- 16 24

Turn-on delay time

t

d(on)

- 5.4 - ns

Rise time

t

r

- 2.8 -

Turn-off delay time

t

d(off)

- 11 -

Fall time

t

f

- 2.4 -

Gate Charge Characteristics

Gate to source charge

Q

gs

- 0.65 - nC

Gate to drain charge

Q

gd

- 0.4 -

Gate charge total

Q

g

- 2.1 -

Gate plateau voltage

V

plateau

- 2 - V

Reverse Diode

Diode continous forward current

I

S

- - 0.5 A

Diode pulse current

I

S,pulse

- - 8.4

Diode forward voltage

V

SD

V

GS

=0 V, I

F

=2.1 A,

T

j

=25 °C

- 0.8 1.2 V

Reverse recovery time

t

rr

- 10 - ns

Reverse recovery charge

Q

rr

- 2.4 - nC

V

R

=10 V, I

F

=2.1 A,

di

F

/dt=100 A/µs

T

A

=25 °C

Values

V

GS

=0 V, V

DS

=10 V,

f=1 MHz

V

DD

=10 V, V

GS

=4.5 V,

I

D

=2.1A, R

G,ext

=6 W

V

DD

=10 V, I

D

=2.1 A,

V

GS

=0 to 4.5 V

Rev 2.3 page 3 2013-11-06

P1-P3 P4-P6 P7-P9

BSL207NH6327XTSA1

Mfr. #:

Buy BSL207NH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

MOSFET SMALL SIGNAL+P-CH

Lifecycle:

New from this manufacturer.

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