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IRF1404STRLPBF

P1-P3P4-P6P7-P9P10-P11
IRF1404S/LPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 40 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V = 20V
DS
V = 32V
DS
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF1404S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25 50 75 100 125 150 175
0
40
80
120
160
200
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF1404S/LPbF
6 www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
0 20 40 60 80 100
I
AV
, Avalanche Current ( A)
40
42
44
46
48
50
V
D
S
a
v
,
A
v
a
l
a
n
c
h
e
V
o
l
t
a
g
e
(
V
)
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
39A
67A
95A
P1-P3P4-P6P7-P9P10-P11

IRF1404STRLPBF

Mfr. #:
Buy IRF1404STRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 40V 162A 4mOhm 160nC
Lifecycle:
New from this manufacturer.
Delivery:
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