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BC849C,235

P1-P3P4-P6P7-P9
2004 Jan 16 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849; BC850
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC849 − 30 V
BC850 − 50 V
V
CEO
collector-emitter voltage open base
BC849 − 30 V
BC850 − 45 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 100 mA
I
CM
peak collector current − 200 mA
I
BM
peak base current − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 16 4
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849; BC850
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Notes
1. V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
2. V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
= 30 V − − 15 nA
I
E
= 0; V
CB
= 30 V; T
j
= 150 °C − − 5 μA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 5 V − − 100 nA
h
FE
DC current gain I
C
= 10 μA; V
CE
= 5 V;
see
Figs 2 and 3
BC849B; BC850B − 240 −
BC849C; BC850C − 450 −
DC current gain I
C
= 2 mA; V
CE
= 5 V;
see
Figs 2 and 3
BC849B; BC850B 200 290 450
BC849C; BC850C 420 520 800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − 90 250 mV
I
C
= 100 mA; I
B
= 5 mA − 200 600 mV
V
BEsat
base-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA; note 1 − 700 − mV
I
C
= 100 mA; I
B
= 5 mA; note 1 − 900 − mV
V
BE
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V; note 2 580 660 700 mV
I
C
= 10 mA; V
CE
= 5 V; note 2 − − 770 mV
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − 2.5 − pF
C
e
emitter capacitance I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz − 11 − pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
F noise figure I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 10 Hz to 15.7 kHz
− − 4 dB
I
C
= 200 μA; V
CE
= 5 V; R
S
= 2 kΩ;
f
= 1 kHz; B = 200 Hz
− − 4 dB
2004 Jan 16 5
NXP Semiconductors Product data sheet
NPN general purpose transistors BC849; BC850
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MBH724
10
−2
10
−1
h
FE
1
I
C
(mA)
10 10
3
10
2
V
CE
= 5 V
BC849B; BC850B.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
600
200
400
MBH725
10
−2
10
−1
h
FE
1
I
C
(mA)
10 10
3
10
2
V
CE
= 5 V
BC849C; BC850C.
P1-P3P4-P6P7-P9

BC849C,235

Mfr. #:
Buy BC849C,235
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS LOW NOISE
Lifecycle:
New from this manufacturer.
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