DMP2035U-7 Datasheet DMP2035U-7, IRFI9540GPBF | P1-P3

DMP2035U

Document number: DS31830 Rev. 4 - 2

1 of 7

www.diodes.com

October 2013

DMP2035U

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number

Compliance

Case

Packaging

DMP2035U-7

Standard

SOT23

3000 / 7” Tape & Reel

DMP2035UQ-7

Automotive

SOT23

3000 / 7” Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2009

2010

2011

2012

2013

2014

2015

Code

W X Y Z A B C

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Top View

Internal Schematic

Top View

D

G

S

Source

Gate

Protection

Diode

Gate

Drain

MP3 = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

MP3

YM

SOT23

ESD PROTECTED TO 3kV

Chengdu A/T Site

Shanghai A/T Site

MP3

YM

Y

YM

DMP2035U

Document number: DS31830 Rev. 4 - 2

2 of 7

www.diodes.com

October 2013

DMP2035U

NEW PRODUCT

Maximum Ratings (@T

A

Characteristic

= +25°C, unless otherwise specified.)

Symbol Value Unit

Drain-Source Voltage

V

-20

DSS

V

Gate-Source Voltage

V

GSS

±8

V

Continuous Drain Current (Note 5)

Steady

State

T

A

T

= +25°C

A

I

= +70°C

-3.6

D

-2.9

A

Pulsed Drain Current (Note 6)

I

DM

-24

A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

P

0.81

D

W

Thermal Resistance, Junction to Ambient @T

A

R = +25°C

153.5

θJA

°C/W

Operating and Storage Temperature Range

T

J

, T

-55 to +150

STG

°C

Electrical Characteristics (@T

A

Characteristic

= +25°C, unless otherwise specified.)

Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

-20

—

— V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

I = +25°C

—

DSS

—

-1.0 μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

—

±10 μA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

-0.4

GS(th)

-0.7 -1.0 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

—

DS(ON)

23

30

41

35

45

62

mΩ

V

GS

= -4.5V, I

D

= -4.0A

V

GS

= -2.5V, I

D

= -4.0A

V

GS

= -1.8V, I

D

= -2.0A

Forward Transfer Admittance

|Y

fs

—

|

14 — S

V

DS

= -5V, I

D

= -4A

Diode Forward Voltage

V

—

SD

-0.7 -1.0 V

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

C

—

iss

1610 —

pF

V

DS

= -10V, V

GS

f = 1.0MHz

= 0V

Output Capacitance

C

oss

—

157 —

pF

Reverse Transfer Capacitance

C

—

rss

145 —

pF

Gate Resistance

R

—

g

9.45 —

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

—

15.4 —

nC

V

GS

= -4.5V, V

DS

I

= -10V,

D

= -4A

Gate-Source Charge

Q

gs

—

2.5 —

nC

Gate-Drain Charge

Q

gd

—

3.3 —

nC

Turn-On Delay Time

t

—

D(on)

16.8 —

ns

V

DS

= -10V, V

GS

R

= -4.5V,

L

= 10Ω, R

G

= 6.0Ω, I

D

= -1A

Turn-On Rise Time

t

r

—

12.4 —

ns

Turn-Off Delay Time

t

—

D(off)

94.1 —

ns

Turn-Off Fall Time

t

—

f

42.4 —

ns

Notes: 5. Device mounted on FR-4 PCB with 2 oz. Copper and test pulse width t ≦10s.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMP2035U

Document number: DS31830 Rev. 4 - 2

3 of 7

www.diodes.com

October 2013

DMP2035U

NEW PRODUCT

0

5

10

15

20

25

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 1 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-I , DRAIN CURRENT (A)

D

V = -2.0V

GS

V = -3.2V

GS

V = -3.5V

GS

V = -4.5V

GS

V = -3.0V

GS

V = -1.5V

GS

V = -8.0V

GS

V = -2.5V

GS

0

5

10

15

20

0.5 1 1.5 2 2.5

Fig. 2 Typical Transfer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

GS

-I , DRAIN CURRENT (A)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -5V

DS

0.02

0.03

0.04

0.05

0.06

0.07

0.1 1 10 100

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

-I , DRAIN-SOURCE CURRENT (A)

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = -4.5V

GS

V = -2.5V

GS

V = -1.8V

GS

0.01

0.02

0.03

0.04

0.05

0 4 8 12 16 20

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -4.5V

GS

DMP2035U-7

DMP2035U-7

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