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NVD5413NT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 0
1 Publication Order Number:
NTD5413N/D
NTD5413N
Power MOSFET
30 Amps, 60 Volts Single N−Channel
DPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
Applications
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Switch Mode Power Supplies
• Power Supplies Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Gate−to−Source Voltage − Nonrepetitive
(T
P
< 10 ms)
V
GS
$30 V
Continuous Drain
Current R
q
JC
(Note 1)
Steady
State
T
C
= 25°C
I
D
30
A
T
C
= 100°C 23
Power Dissipation
R
q
JC
(Note 1)
Steady
State
T
C
= 25°C P
D
68 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
84 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
30 A
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V, I
L(pk)
= 30 A,
L = 0.3 mH, R
G
= 25 W)
E
AS
135 mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) Steady State
(Note 1)
R
q
JC
2.2
°C/W
R
q
JA
58.5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
(Note 1)
60 V 30 A
N−Channel
D
S
G
5413N = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
STYLE 2
MARKING
DIAGRAM
1
2
3
4
YWW
5413N
26 mW @ 10 V
NTD5413N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V
(BR)DSS
/T
J
67.5 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 150°C 50
Gate−Body Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 mA
2.0 3.4 4.0 V
Negative Threshold Temperature Coefficient V
GS(th)
/T
J
7.9 mV/°C
Drain−to−Source On−Voltage V
DS(on)
V
GS
= 10 V, I
D
= 20 A 0.37 0.52
V
V
GS
= 10 V, I
D
= 20 A, 150°C 0.86
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 20 A 18.5 26
mW
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 20 A 36 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
1160 1725
pF
Output Capacitance C
oss
240
Transfer Capacitance C
rss
100
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 20 A
35 46
nC
Threshold Gate Charge Q
G(TH)
1.4
Gate−to−Source Charge Q
GS
6.5
Gate−to−Drain Charge Q
GD
16.1
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 20 A, R
G
= 2.5 W
11
ns
Rise Time t
r
20
Turn−Off Delay Time t
d(off)
28
Fall Time t
f
8.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
V
SD
V
GS
= 0 V
I
S
= 20 A
T
J
= 25°C 0.87 1.2
V
T
J
= 125°C 0.8
Reverse Recovery Time t
rr
I
S
= 20 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
52
ns
Charge Time t
a
37
Discharge Time t
b
15
Reverse Recovery Stored Charge Q
RR
105.7 nC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device Package Shipping
†
NTD5413NT4G DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD5413N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
0
20
40
60
80
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
V
GS
= 4.8 V
5 V
6 V
10 V
T
J
= 25°C
0
20
40
60
80
345678
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
567 8 910
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
I
D
= 20 A
T
J
= 25°C
0.010
0.012
0.014
0.016
0.018
0.020
0.022
0.024
10 20 30 40 50 60
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 25°C
V
GS
= 10 V
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−50 −25 0 25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
Figure 5. On−Resistance Variation with
Temperature
I
D
= 20 A
V
GS
= 10 V
10
100
1000
51015202530354045505560
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
V
DS
≥ 10 V
0.026
0.028
7 V
2.2
2.4
P1-P3P4-P6

NVD5413NT4G

Mfr. #:
Buy NVD5413NT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 30A DPAK
Lifecycle:
New from this manufacturer.
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