Jantxv2N3810L Datasheet Jantxv2N3810, 2N3810U, Jantx2N3810 | P1-P3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

T4-LDS-0118 Rev. 1 (091095) Page 1 of 3

DEVICES LEVELS

2N3810 2N3811 JAN

2N3810L 2N3811L JANTX

2N3810U 2N3811U JANTV

JANS

ABSOLUTE MAXIMUM RATINGS (T

C

= +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage V

CEO

60 Vdc

Collector-Base Voltage V

CBO

60 Vdc

Emitter-Base Voltage V

EBO

5.0 Vdc

Collector Current I

C

50 mAdc

One

Section

1

Both

Sections

2

Total Power Dissipation @ T

A

= +25°C

P

T

200 350 mW

Operating & Storage Junction Temperature

Range

T

J

, T

stg

-65 to +200 °C

Note:

1. Derate linearly 1.143mW/°C for T

A

> +25°C (one section)

2. Derate linearly 2.00mW/°C for T

A

> +25°C (both sections)

ELECTRICAL CHARACTERISTICS (T

A

= +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I

C

= 100μAdc

V

(BR)CEO

60 Vdc

Collector-Base Cutoff Current

V

CB

= 50Vdc

V

CB

= 60Vdc

I

CBO

10

ηAdc

μAdc

Emitter-Base Cutoff Current

V

EB

= 4.0Vdc

V

EB

= 5.0Vdc

I

EBO

10

ηAdc

μAdc

TO-78

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

T4-LDS-0118 Rev. 1 (091095) Page 2 of 3

ELECTRICAL CHARACTERISTICS (con’t)

Parameters / Test Conditions Symbol Min. Max. Unit

ON CHARACTERTICS

Forward-Current Transfer Ratio

I

C

= 10μAdc, V

CE

= 5.0Vdc

I

C

= 100μAdc, V

CE

= 5.0Vdc

I

C

= 1.0mAdc, V

CE

= 5.0Vdc

I

C

= 10mAdc, V

CE

= 5.0Vdc

2N3810, 2N3810L , 2N3810U h

FE

100

150

125

450

I

C

= 1.0μAdc, V

CE

= 5.0Vdc

I

C

= 10μAdc, V

CE

= 5.0Vdc

I

C

= 100μAdc, V

CE

= 5.0Vdc

I

C

= 1.0mAdc, V

CE

= 5.0Vdc

I

C

= 10mAdc, V

CE

= 5.0Vdc

2N3811, 2N3811L, 2N3811U h

FE

75

225

300

250

900

Collector-Emitter Saturation Voltage

I

C

= 100μAdc, I

B

= 10μAdc

I

C

= 1.0mAdc, I

B

= 100μAdc

V

CE(sat)

0.2

0.25

Vdc

Base-Emitter Saturation Voltage

I

C

= 100μAdc, I

B

= 10μAdc

I

C

= 1.0mAdc, I

B

= 100μAdc

V

BE(sat)

0.7

0.8

Vdc

Base-Emitter Non-Saturation Voltage

V

CE

= 5.0Adc, I

C

= 100μAdc

V

BE

0.7

Vdc

DYNAMIC CHARACTERISTICS

Forward Current Transfer Ratio, Magnitude

I

C

= 500μAdc, V

CE

= 5.0Vdc, f = 30MHz

I

C

= 1.0mAdc, V

CE

= 5.0Vdc, f = 100MHz

|h

fe

|

1.0

5.0

Small-Signal Short Circuit Forward Current Transfer Ratio

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz

2N3810, 2N3810L , 2N3810U

2N3811, 2N3811L , 2N3811U

h

fe

150

300

600

900

Small-Signal Short Circuit Input Impedance

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz

2N3810, 2N3810L , 2N3810U

2N3811, 2N3811L , 2N3811U

h

je

3.0

30

40

kΩ

Small-Signal Short Circuit Output Admittance

I

C

= 1.0mAdc, V

CE

= 10Vdc, f = 1.0kHz

2N3810, 2N3810L , 2N3810U

2N3811, 2N3811L , 2N3811U

h

oe

5.0 60

μmhos

Output Capacitance

V

CB

= 5.0Vdc, I

E

= 0, 100kHz ≤ f ≤ 1.0MHz

C

obo

5.0

pF

Input Capacitance

V

EB

= 5.0Vdc, I

C

= 0, 100kHz ≤ f ≤ 1.0MHz

C

Ibo

8.0

pF

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

PNP SILICON DUAL TRANSISTOR

Qualified per MIL-PRF-19500 /336

T4-LDS-0118 Rev. 1 (091095) Page 3 of 3

DYNAMIC CHARACTERISTICS (cont.)

Parameters / Test Conditions Symbol Min. Max. Unit

Noise Figure

I

C

= 100μAdc, V

CE

= 10Vdc, f = 100Hz, R

G

= 3.0kΩ

2N3810, L, U F

1

7.0

I

C

= 100μAdc, V

CE

= 10Vdc, f = 1.0kHz, R

G

= 3.0kΩ

2N3810, L, U F

2

3.0

I

C

= 100μAdc, V

CE

= 10Vdc, f = 10kHz, R

G

= 3.0kΩ

2N3810, L, U F

3

2.5

I

C

= 100μAdc, V

CE

= 10Vdc, f = 10Hz to 15.7kHz, R

G

= 3.0kΩ

2N3810, L, U F

4

3.5

dB

I

C

= 100μAdc, V

CE

= 10Vdc, f = 100Hz, R

G

= 3.0kΩ

2N3811, L, U F

1

4.0

I

C

= 100μAdc, V

CE

= 10Vdc, f = 1.0kHz, R

G

= 3.0kΩ

2N3811, L, U F

2

1.5

I

C

= 100μAdc, V

CE

= 10Vdc, f = 10kHz, R

G

= 3.0kΩ

2N3811, L, U F

3

2.0

I

C

= 100μAdc, V

CE

= 10Vdc, f = 10Hz to 15.7kHz, R

G

= 3.0kΩ

2N3811, L, U F

4

2.5

dB

Jantxv2N3810L

Jantxv2N3810L

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