KSC2330ABU

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2330A

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 400 V

V

CEO

Collector-Emitter Voltage 400 V

V

EBO

Emitter-Base Voltage 7 V

I

C

Collector Current 100 mA

P

C

Collector Power Dissipation 1 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ +150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 400 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=5mA, I

B

=0 400 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=100µA, I

C

=0 7 V

I

CBO

Collector Cut-off Current V

CB

=200V, I

E

=0 0.1 µA

h

FE

DC Current Gain V

CE

=10V, I

C

=20mA 40 80

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=10mA, I

B

=1mA 0.5 V

f

T

Current Gain Bandwidth Product V

CE

=30V, I

C

=10mA 50 MHz

C

ob

Output Capacitance V

CB

=10V, I

E

=0, f=1MHz 4 pF

Classification R O

h

FE

40 ~ 65 55 ~ 80

KSC2330A

Color TV Chroma Output

• Collector-Base Voltage : V

CBO

=400V

• Current Gain Bandwidth Product : f

T

=50MHz (TYP.)

TO-92L

1

1. Emitter 2. Collector 3. Base

©2002 Fairchild Semiconductor Corporation

KSC2330A

Rev. A2, September 2002

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Power Derating

0 20 40 60 80 100 120

0

4

8

12

16

20

I

B

= 120µA

I

B

= 20

µ

A

I

B

= 100µA

I

B

= 80

µ

A

I

B

= 60µA

I

B

= 40µA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

110100

1

10

100

1000

V

CE

= 10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

1 10 100

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

110100

0.1

1

10

100

f = 1MHz

I

E

= 0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR BASE VOLTAGE

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

P

C

[W], POWER DISSIPATION

T

a

[

o

C], AMIBIENT TEMPERATURE

Package Dimensions

KSC2330A

4.90

±0.20

0.50

±0.10

1.27TYP

[1.27

±0.20

]

0.45

±0.10

0.45

±0.10

0.80

±0.10

0.70MAX.

1.00MAX.

2.54 TYP

8.00

±0.20

1.70

±0.20

1.00

±0.10

13.50

±0.40

3.90

±0.20

3.90

±0.20

1.45

±0.20

TO-92L

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

KSC2330ABU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Sil

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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