FDS6614A
FDS6614A Rev. C
Notes:
1. R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
qJC
is guaranteed by design while R
qJA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum pad.
DMOS Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 1
µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= –20 V, V
DS
= 0 V -100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.6 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4
mV/°C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 9.3 A
V
GS
= 10 V, I
D
= 9.3 A
T
J
@ 125°C
V
GS
= 4.5 V, I
D
= 8 A
0.015
0.022
0.019
0.018
0.030
0.025
Ω
I
D(on)
On-State Drain Current V
GS
= 10 V, V
DS
= 5 V 20 A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 9.3 A 26 S
Dynamic Characteristics
C
iss
Input Capacitance 1160 pF
C
oss
Output Capacitance 250 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
100 pF
Switching Characteristics (Note 2)
t
d(on)
Turn-On Delay Time 9 17 ns
t
r
Turn-On Rise Time 11 20 ns
t
d(off)
Turn-Off Delay Time 23 37 ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
8 16 ns
Q
g
Total Gate Charge 12 17 nC
Q
gs
Gate-Source Charge 3.2 nC
Q
gd
Gate-Drain Charge
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 5 V
3.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.75 1.2 V
