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AUIRF5210STRL

P1-P3P4-P6P7-P9P10-P10
AUIRF5210S
V
DSS
-100V
R
DS(on)
max.
60m
I
D
-38A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Features
Advanced Process Technology
P-Channel MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -38
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -24
I
DM
Pulsed Drain Current -140
P
D
@T
A
= 25°C Maximum Power Dissipation 3.1
W
P
D
@T
C
= 25°C Maximum Power Dissipation 170
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 120
mJ
I
AR
Avalanche Current -23 A
E
AR
Repetitive Avalanche Energy 17 mJ
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
dv/dt Peak Diode Recovery dv./dt -7.4 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.75
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) 40
D
2
Pak
AUIRF5210S
S
D
G
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF5210S D
2
-Pak
Tube 50 AUIRF5210S
Tape and Reel Left 800 AUIRF5210STRL
G D S
Gate Drain Source
AUIRF5210S
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.46mH, R
G
= 25, I
AS
= -23A.(See Fig.12)
I
SD
 -23A, di/dt -650A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width 300µs; duty cycle 2%.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100 ––– ––– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 60
m
V
GS
= -10V, I
D
= -38A
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V V
DS
= V
GS
, I
D
= -250µA
gfs Forward Trans conductance 9.5 ––– ––– S V
DS
= -50V, I
D
= -23A
I
DSS
Drain-to-Source Leakage Current
––– ––– -50
µA
V
DS
= -100V, V
GS
= 0V
––– ––– -250 V
DS
= -80V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 150 230
nC
I
D
= -23A
Q
gs
Gate-to-Source Charge ––– 22 33 V
DS
= -80V
Q
gd
Gate-to-Drain Charge ––– 81 120
V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 14 –––
ns
V
DD
= -50V
t
r
Rise Time ––– 63 –––
I
D
= -23A
t
d(off)
Turn-Off Delay Time ––– 72 –––
R
G
= 2.4
t
f
Fall Time ––– 55 –––
V
GS
= -10V
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 2780 –––
V
GS
= 0V
C
oss
Output Capacitance ––– 800 ––– V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 430 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– -38
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -140
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V T
J
= 25°C,I
S
= -23A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 170 260 ns
T
J
= 25°C ,I
F
= -23A, V
DD
= -25V
Q
rr
Reverse Recovery Charge ––– 1180 1770 nC
di/dt = -100A/µs 
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
pF
AUIRF5210S
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-4.5V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2 4 6 8 10 12 14
-V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= -50V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -38A
V
GS
= -10V
P1-P3P4-P6P7-P9P10-P10

AUIRF5210STRL

Mfr. #:
Buy AUIRF5210STRL
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET P 38A 150nC D2Pak
Lifecycle:
New from this manufacturer.
Delivery:
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