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DMP1055UFDB-7

P1-P3P4-P6
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) max
I
D MAX
T
A
= +25°C
-12V
59m @ V
GS
= -4.5V
-3.9A
81m @ V
GS
= -2.5V
-3.3A
115m @ V
GS
= -1.8V
-2.8A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP1055UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel
DMP1055UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
e4
Bottom View
Internal Schematic
D6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
S1
G1
D2
S2
G2
D1
D2
Pin1
Q
1 P-CHANNEL
Q
2 P-CHANNEL
U-DFN2020-6
Type B
D1
ESD PROTECTED
D1
S1
G1
Gate Protection
Diode
D2
S2
G2
Gate Protection
Diode
D6
Y
M
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-12 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-3.9
-3.1
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-1.7
A
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
-25 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.36
W
t < 5s 1.89
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
JA
92
°C/W
t < 5s 66
Thermal Resistance, Junction to Case (Note 5)
R
JC
18
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12
— —
V
V
GS
= 0V, I
D
= -250A
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— —
-1.0 A
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±10 A
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.4 — -1 V
V
DS
= V
GS
, I
D
= -250A
Static Drain-Source On-Resistance
R
DS (ON)
—
37 59
m
V
GS
= -4.5V, I
D
= -3.6A
—
48 81
V
GS
= -2.5V, I
D
= -3.1A
—
69 115
V
GS
= -1.8V, I
D
= -2.6A
—
88 215
V
GS
= -1.5V, I
D
= -0.5A
Diode Forward Voltage
V
SD
—
-0.7 -1.2 V
V
GS
= 0V, I
S
= -3.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 1028 —
pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 285 —
pF
Reverse Transfer Capacitance
C
rss
— 254 —
pF
Gate Resistance
R
g
— 19.6 —
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 13 —
nC
V
DS
= -10V, I
D
= -4.7A
Total Gate Charge (V
GS
= -8V)
— 20.8 —
nC
Gate-Source Charge
Q
g
s
— 1.8 —
nC
Gate-Drain Charge
Q
g
d
— 4.5 —
nC
Turn-On Delay Time
t
D
(
on
)
— 5.6 —
ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6, R
G
= 1
Turn-On Rise Time
t
— 12.8 —
ns
Turn-Off Delay Time
t
D
(
off
)
— 30.7 —
ns
Turn-Off Fall Time
t
f
— 25.4 —
ns
Body Diode Reverse Recovery Time trr
—
31.6
—
nS
I
S
= -3.6A, dI/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr
—
7.8
—
nC
I
S
= -3.6A, dI/dt = 100A/s
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
3 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP1055UFDB
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
V = -0.9V
GS
V = -1.0V
GS
V = -3.5V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -1.5V
GS
V = -1.8V
GS
V = -2.0V
GS
V = -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
T = 150C
A
T = 125C
A
T = 85C
A
T = 25C
A
T = -55C
A
V = -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0.001
02468101214161820
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
V = -1.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
0.02
0.03
0.04
0.05
0.06
0 2 4 6 8 101214161820
T = -55C
A
T = 25C
A
T = 85C
A
T = 125C
A
T = 150C
A
V= -4.5V
GS
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
V = -1.8V
I = -3.0A
GS
D
V = -2.5V
I = -5.0A
GS
D
T, JUNCTION TEMPERATURE (C)
J
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-50 -25 0 25 50 75 100 125 150
V = -2.5V
I= A
GS
D
-5.0
V= V
I= A
GS
D
-1.8
-3.0
P1-P3P4-P6

DMP1055UFDB-7

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MOSFET 2PCH 12V 3.9A UDFN2020
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