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VS-ST180S08P0VPBF

P1-P3P4-P6P7-P8
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
4
Document Number: 94397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 40 80 120 160 200 240
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST1 8 0 S Se r i e s
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
DC
30°
60°
90°
120°
180°
Avera ge On-st a te Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST1 8 0 S Se r i e s
R (DC) = 0.105 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
8
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0.
1
K/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1
.
2
K
/
W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST1 8 0 S Se r i e s
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
8
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K/
W
1
.
2
K
/
W
0
50
100
150
200
250
300
350
400
450
500
0 40 80 120 160 200 240 280 320
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST180S Se rie s
T = 12 5 ° C
J
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
5
Document Number: 94397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
2000
2400
2800
3200
3600
4000
4400
4800
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wave On-state Current (A)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST1 8 0 S Se r i e s
At Any Rat ed Load Condition And With
Rated V Applied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
5500
0.01 0.1 1
Pulse Tra in Dura t ion ( s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Volta g e Rea pplied
Ra t e d V Re a p p l i e d
RRM
J
ST180S Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST1 8 0 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
ST1 8 0 S Se r i e s
Steady State Value
R = 0.105 K/ W
(DC Operation)
thJC
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94397
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(1) (2)
(3)
In st a n t a n e o u s G a t e C u r r e n t ( A )
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% ra ted di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
D e v i c e : ST1 8 0 S Se r i e s
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95082
P1-P3P4-P6P7-P8

VS-ST180S08P0VPBF

Mfr. #:
Buy VS-ST180S08P0VPBF
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 200 Amp 800 Volt 314 Amp IT(RMS)
Lifecycle:
New from this manufacturer.
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