VOM617A-3X001T

VOM617A
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 11-Dec-12
1
Document Number: 83446
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Input Current, Phototransistor Output, SOP-4,
Mini-Flat Package
DESCRIPTION
The 110 °C rated VOM617A has a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4 pin
100 mil lead pitch miniflat package. It features a high current
transfer ratio, low coupling capacitance, and high isolation
voltage.
These coupling devices are designed for signal transmission
between two electrically separated circuits.
AGENCY APPROVALS
(All parts are certified under base model VOM617A)
UL1577, file no. E52744
cUL tested to CSA 22.2 bulletin 5A
DIN EN 60747-5-5 (VDE 0884-5), available with option 1
FIMKO EN 60065 and EN 60950-1
CQC GB8898-2011, GB4943.1-2001
FEATURES
Operating temperature from - 55 °C to + 110 °C
SOP-4 mini-flat package
Isolation test voltage, 3750 V
RMS
Low saturation voltage
Fast switching times
Low coupling capacitance
End-stackable, 0.100" (2.54 mm) spacing
CTR range 40 % to 600 %, I
F
= 5 mA
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•PLCs
Telecommunication
Lighting control system
Solar inverters
AC drives
E
C
A
C
1
2
4
3
i179089
ORDERING INFORMATION
VOM6 1 7 A - #X0 0 1 T
PART NUMBER CTR
BIN
VDE OPTION TAPE
AND
REEL
AGENCY
CERTIFIED/
PACKAGE
CTR (%)
5 mA
UL, cUL,
FIMKO, CQC
50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400
SOP-4,
mini-flat
VOM617AT VOM617A-2T VOM617A-3T VOM617A-4T VOM617A-6T VOM617A-7T VOM617A-8T VOM617A-9T
VDE, UL, cUL,
FIMKO, CQC
50 to 600 63 to 125 100 to 200 160 to 320 250 to 500 80 to 160 130 to 260 200 to 400
SOP-4,
mini-flat
VOM617A-
X001T
VOM617A-
2X001T
VOM617A-
3X001T
VOM617A-
4X001T
VOM617A-
6X001T
VOM617A-
7X001T
VOM617A-
8X001T
VOM617A-
9X001T
SOP-4
5
VOM617A
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 11-Dec-12
2
Document Number: 83446
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
See “Assembly Instructions” for surface mounted devices (www.vishay.com/doc?80054).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
DC forward current I
F
60 mA
Reverse voltage V
R
6V
Power dissipation P
diss
70 mW
Surge forward current t
p
10 μs I
FSM
2.5 A
OUTPUT
Collector emitter voltage V
CEO
80 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
t
p
1 ms 100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1 min V
ISO
3750 V
RMS
Total power dissipation P
tot
170 mW
Operating temperature range T
amb
- 55 to + 110 °C
Storage temperature range T
stg
- 55 to + 150 °C
Junction temperature T
j
125 °C
Soldering temperature
(1)
T
sld
260 °C
0
50
100
150
200
0 25 50 75 100 125
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
VOM617A
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 11-Dec-12
3
Document Number: 83446
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 5 mA V
F
1.1 1.6 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
j
9pF
OUTPUT
Collector emitter leakage current V
CE
= 20 V I
CEO
0.3 100 nA
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
80 V
Emitter collector breakdown voltage I
E
= 10 μA BV
ECO
7V
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
2.8 pF
COUPLER
Coupling capacitance f = 1 MHz C
IO
0.3 pF
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.12 0.4 V
Cut-off frequency I
F
= 10 mA, V
CC
= 5 V, R
L
= 100 Ω f
ctr
110 kHz
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
VOM617A CTR 50 600 %
VOM617A-2 CTR 63 125 %
VOM617A-3 CTR 100 200 %
VOM617A-4 CTR 160 320 %
VOM617A-6 CTR 250 500 %
VOM617A-7 CTR 80 160 %
VOM617A-8 CTR 130 260 %
VOM617A-9 CTR 200 400 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise and fall time
I
C
= 2 mA, V
CC
= 5 V,
R
L
= 100 Ω
t
r
s
Fall time t
f
s
Turn-on time t
on
s
Turn-off time t
off
s
SATURATED
Rise and fall time
I
F
= 1.6 mA, V
CC
= 5 V,
R
L
= 1.9 kΩ
t
r
s
Fall time t
f
12 μs
Turn-on time t
on
s
Turn-off time t
off
15 μs

VOM617A-3X001T

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out CTR 100-200% 5mA VDE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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