2001 May 18 3
NXP Semiconductors Product specification
Silicon PIN diode BAP63-05W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage I
F
= 50 mA 0.95 1.1 V
I
R
reverse current V
R
=35V 10 nA
C
d
diode capacitance V
R
=0; f=1MHz 0.4 pF
V
R
= 1 V; f = 1 MHz 0.35 pF
V
R
=20V; f=1MHz 0.3 0.35 pF
r
D
diode forward resistance I
F
= 0.5 mA; f = 100 MHz; note 1 2.5 3.5
I
F
= 1 mA; f = 100 MHz; note 1 1.95 3
I
F
= 10 mA; f = 100 MHz; note 1 1.17 1.8
I
F
= 100 mA; f = 100 MHz; note 1 0.9 1.5
s
21
2
isolation V
R
= 0; f = 900 MHz 14.5 dB
V
R
= 0; f = 1800 MHz 9.5 dB
V
R
= 0; f = 2450 MHz 7.0 dB
s
21
2
insertion loss I
F
= 0.5 mA; f = 900 MHz 0.23 dB
I
F
= 0.5 mA; f = 1800 MHz 0.27 dB
I
F
= 0.5 mA; f = 2450 MHz 0.33 dB
s
21
2
insertion loss I
F
= 1 mA; f = 900 MHz 0.19 dB
I
F
= 1 mA; f = 1800 MHz 0.24 dB
I
F
= 1 mA; f = 2450 MHz 0.30 dB
s
21
2
insertion loss I
F
=10mA; f=900MHz 0.14 dB
I
F
= 10 mA; f = 1800 MHz 0.19 dB
I
F
= 10 mA; f = 2450 MHz 0.25 dB
s
21
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.11 dB
I
F
= 100 mA; f = 1800 MHz 0.17 dB
I
F
= 100 mA; f = 2450 MHz 0.23 dB
L
charge carrier life time when switched from I
F
=10mA to
I
R
=6mA; R
L
=100;
measured at I
R
=3mA
310 ns
L
S
series inductance I
F
= 100 mA; f = 100 MHz 1.5 nH
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 250 K/W
