VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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Vishay Semiconductors
Revision: 12-Nov-15
1
Document Number: 93492
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Power Silicon Rectifier Diodes,
(Stud Version), 35 A, 40 A, 60 A
FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Note
(1)
JEDEC
®
registered values
ELECTRICAL SPECIFICATIONS
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1)
JEDEC
®
registered values
(2)
For 1N1183 Series and 1N3765 Series T
C
= -65 °C to +190 °C
PRODUCT SUMMARY
I
F(AV)
35 A, 40 A, 60 A
Package DO-203AB (DO-5)
Circuit configuration Single diode
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
I
F(AV)
35
(1)
35
(1)
40
(1)
60
(1)
A
T
C
140
(1)
140
(1)
150
(1)
140
(1)
°C
I
FSM
50 Hz 480 380 765 860
A
60 Hz 500
(1)
400
(1)
800
(1)
900
(1)
I
2
t
50 Hz 1140 730 2900 3700
A
2
s
60 Hz 1040 670 2650 3400
I
2
t 16 100 10 300 41 000 52 500 A
2
s
V
RRM
Range 50 to 600
(1)
700 to 1000
(1)
50 to 600
(1)
50 to 600
(1)
V
T
J
-65 to +200 -65 to +200 -65 to +200 -65 to +200 °C
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
J
= -65 °C to +200 °C
(2)
)
V
VS-1N1183 VS-1N1183A VS-1N2128A 50
(1)
50
(1)
VS-1N1184 VS-1N1184A VS-1N2129A 100
(1)
100
(1)
VS-1N1185 VS-1N1185A VS-1N2130A 150
(1)
150
(1)
VS-1N1186 VS-1N1186A VS-1N2131A 200
(1)
200
(1)
VS-1N1187 VS-1N1187A VS-1N2133A 300
(1)
300
(1)
VS-1N1188 VS-1N1188A VS-1N2135A 400
(1)
400
(1)
VS-1N1189 VS-1N1189A VS-1N2137A 500
(1)
500
(1)
VS-1N1190 VS-1N1190A VS-1N2138A 600
(1)
600
(1)
VS-1N3765 700
(1)
700
(1)
VS-1N3766 800
(1)
800
(1)
VS-1N3767 900
(1)
900
(1)
VS-1N3768 1000
(1)
1000
(1)
