NCP1239
www.onsemi.com
4
Figure 2. Simplified Block Diagram
Vcc
Drv
LEB
GND
CS
FB
HV
Dual HV startup
current source
HV sample
600−ns time
constant
Up counter
4
RST
OVP/OTP
gone?
Fault
Vfault(clamp)
VFault(OTP)
VFault(OVP)
IOTP
Option for
OVP_VCC
Up counter
4
RST
VLimit2
LEB
120 ns
300 ns
VLimit1
Soft−start
Ramp
8 ms
SS end
Vdd
/ 4
Rup
Vskip
Overcurrent
Soft−start
PWM
Oscillator
65 kHz / 100 kHz
Compensation
Slope
Stop
Foldback
Jitter
S
R
Q
Q
OCP_flag
PWM
OCP
Timer
64 ms
OCP_flag
Skip
HV detection
& sampling
BO
Vcc logic
management
20us time
constant
TSD
VCC(OVP)
OVP_VCC
OVP_VCC
(option)
Vdd
Vdd
Vcc(reset)
UVLO
S
R
Q
Q
Vcc(reset)
Latch
Protection
Mode
Reset
Vcc(reset)
Timer
1 s
Auto−recovery
S
R
Q
Q
Clamp
Clock
BO
Latch
TSD
Skip
Clock
+
NC
BO end
BO end
UVLO
Vdd
Ibias
OCP Fault
gone?
BO
TSD
TSD end
Iopp
HV sample
Dmax
OPP Current
Generation
NCP1239
www.onsemi.com
5
Table 3. MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage, V
CC
Pin, Continuous Voltage V
CC
−0.3 to 35 V
Maximum Voltage on Low Power Pins CS, FB and Fault −0.3 to 5.5 V
Maximum Voltage on DRV Pin V
DRV
−0.3 to 20 V
High Voltage Pin HV −0.3 to 650 V
Thermal Resistance Junction-to-Air
Single Layer PCB 25 mm@, 2 Oz Cu Printed Circuit Copper Clad
R
θ
J−A
250 °C/W
Maximum Junction Temperature T
J(max)
150 °C
Storage Temperature Range TSTG −60 to 150 °C
ESD Capability (Note 2)
Human Body Model – All Pins Except HV
Machine Model
ESD
HBM
ESD
MM
4
200
kV
V
Charged-Device Model ESD Capability per JEDEC JESD22−C101E 1 kV
Moisture Sensitivity Level MSL 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JEDEC JESD22−A114F
ESD Machine Model tested per JEDEC JESD22−A115C
Charged-Device Model ESD Capability tested per JEDEC JESD22−C101E
Latch-up Current Maximum Rating: 150 mA per JEDEC standard: JESD78
Table 4. ELECTRICAL CHARACTERISTICS
(For typical values T
J
= 25°C, for min/max Values T
J
= −40°C to +125°C, V
HV
= 125 V, V
CC
= 11 V unless otherwise noted)
Parameter
Test Conditions Symbol Min Typ Max Unit
START-UP SECTION
Minimum Voltage for Current Source Operation
I
HV
= 90% I
START2
,
V
CC
= V
CC(on)
− 0.5 V
V
HV(min)
25 60 V
Current Flowing Out of V
CC
Pin V
CC
= 0 V I
START1
0.2 0.5 0.8 mA
Current Flowing Out of V
CC
Pin V
CC
= V
CC(on)
– 0.5 V I
START2
1.5 3 4.5 mA
HV Pin Leakage Current V
HV
= 325 V I
LEAK1
8 20
mA
SUPPLY SECTION
Start-Up Threshold
HV Current Source Stop Threshold
V
CC
Increasing V
CC(on)
11.0 12.0 13.0 V
HV Current Source Restart Threshold V
CC
Decreasing V
CC(min)
9.0 10.0 11.0 V
Minimum Operating Voltage V
CC
Decreasing V
CC(off)
8.0 8.8 9.4 V
Operating Hysteresis V
CC(on)
= V
CC(off)
V
CC(hys)
3.0 V
V
CC
Level for I
START1
to I
START2
Transition V
CC(inhibit)
0.7 1.2 1.7 V
V
CC
Level where Logic Functions are Reset V
CC
Decreasing V
CC(reset)
6.5 7 7.5 V
Internal IC Consumption V
FB
= 3.2 V, F
SW
= 65 kHz
and C
L
=0
ICC1 1.4 2.2 mA
Internal IC Consumption V
FB
= 3.2 V, F
SW
= 65 kHz
and C
L
=1nF
ICC2 2.1 3.0 mA
Internal IC Consumption V
FB
= 3.2 V, F
SW
= 100 kHz
and C
L
=0
ICC1 1.7 2.5 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Guaranteed by design
2. CS pin source current is a sum of I
BIAS
and I
OPP
, thus at V
HV
= 125 V is observed the I
BIAS
only, because I
OPC
is switched off.
NCP1239
www.onsemi.com
6
Table 4. ELECTRICAL CHARACTERISTICS (continued)
(For typical values T
J
= 25°C, for min/max Values T
J
= −40°C to +125°C, V
HV
= 125 V, V
CC
= 11 V unless otherwise noted)
Parameter UnitMaxTypMinSymbolTest Conditions
SUPPLY SECTION
Internal IC Consumption
V
FB
= 3.2 V, F
SW
= 100 kHz
and C
L
= 1 nF
ICC2 3.1 4.0 mA
Internal IC Consumption in Skip Cycle V
CC
= 12 V, V
FB
= 0.775 V
Driving 8 A/650 V MOSFET
ICC(stb) 500
mA
Internal IC Consumption in Fault Mode Fault or Latch ICC3 400
mA
Internal IC Consumption before Start-Up V
CC(min)
< V
CC
< V
CC(on)
ICC4 310
mA
Internal IC Consumption before Start-Up V
CC
< V
CC(min)
ICC5 20
mA
DRIVE OUTPUT
Rise Time (10−90%)
V
DRV
from 10 to 90%
V
CC
= V
CC(off)
+ 0.2 V,
C
L
= 1 nF
t
R
40 ns
Fall Time (90−10%) V
DRV
from 90 to 10%
V
CC
= V
CC(off)
+ 0.2 V,
C
L
= 1 nF
t
F
30 ns
Source Resistance R
OH
6
W
Sink Resistance R
OL
6
W
Peak Source Current DRV High State,
V
DRV
= 0 V (Note 1)
V
CC
= V
CC(off)
+ 0.2 V,
C
L
= 1 nF
I
SOURCE
500 mA
Peak Sink Current DRV Low State,
V
DRV
= V
CC
(Note 1)
V
CC
= V
CC(off)
+ 0.2 V,
C
L
= 1 nF
I
SINK
500 mA
High State Voltage
(Low V
CC
Level)
V
CC
= 9 V, R
DRV
= 33 kW
DRV High State
V
DRV(low)
8.8 V
High State Voltage
(High V
CC
Level)
V
CC
= V
CC(OVP)
– 0.2 V,
DRV High State and Unloaded
V
DRV(clamp)
11.0 13.5 16.0 V
CURRENT COMPARATOR
Input Pull-Up Current
V
CS
= 0.7 V I
BIAS
1
mA
Maximum Internal Current Setpoint T
J
from −40°C to +125°C
(No OPP)
V
LIMIT1
0.752 0.800 0.848 V
Abnormal Over-Current Fault Threshold T
J
= +25°C (No OPP) V
LIMIT2
1.10 1.20 1.30 V
Default Internal Voltage Set Point for
Frequency Foldback Trip Point
~59% of V
LIMIT
V
FOLD(CS)
475 mV
Internal Peak Current Setpoint Freeze ~31% of V
LIMIT
V
FREEZE(CS)
250 mV
Propagation Delay from V
LIMIT
Detection to
Gate Off-State
DRV Output Unloaded t
DEL
50 100 ns
Leading Edge Blanking Duration t
LEB1
300 ns
Abnormal Over-Current Fault Blanking
Duration for V
LIMIT3
t
LEB2
120 ns
Number of Clock Cycles before Fault
Confirmation
t
COUNT
4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Guaranteed by design
2. CS pin source current is a sum of I
BIAS
and I
OPP
, thus at V
HV
= 125 V is observed the I
BIAS
only, because I
OPC
is switched off.

NCP1239KD65R2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers NCP1239K, 65KHZ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union