Characteristics X02
2/11 Doc ID 7480 Rev 4
1 Characteristics
Table 2. Absolute ratings (limiting values, T
J
= 25 °C unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180 °Conduction angle)
TO-92 T
L
= 63 °C
1.25 ASOT-223 T
tab
= 99 °C
SMBflat-3L T
tab
= 111 °C
IT
(AV)
Average on-state current (180 °Conduction angle)
TO-92 T
L
= 63 °C
0.8 ASOT-223 T
tab
= 99 °C
SMBflat-3L T
tab
= 111 °C
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
25
A
t
p
= 10 ms 22.5
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25 °C 2.5 A
2
s
di/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 1.2 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 0.2 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3. Electrical characteristics (T
J
= 25 °C unless otherwise specified)
Symbol Test conditions X0202 X0205 Unit
I
GT
V
D
= 12 V, R
L
= 140 Ω
Min. 20
µA
Max. 200 50
V
GT
Max. 0.8 V
V
GD
V
D
= V
DRM,
R
L
= 3.3 kΩ , R
GK
= 1 kΩ T
j
= 125 °C Min. 0.1 V
V
RG
I
RG
= 10 µA Min. 8 V
I
H
I
T
= 50 mA, R
GK
= 1 kΩ Max. 5 mA
I
L
I
G
= 1 mA, R
GK
= 1 kΩ Max. 6 mA
dV/dt V
D
= 67% V
DRM,
R
GK
= 1 kΩ T
j
= 110 °C Min. 10 15 V/µs
Table 4. Static electrical characteristics
Symbol Test conditions X0202 X0205 Unit
V
TM
I
TM
= 2.5 A, t
p
= 380 µs T
j
= 25 °C
Max.
1.45 V
V
TO
Threshold voltage
T
j
= 125 °C
0.9 V
R
d
Dynamic resistance 200 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM,
R
GK
= 1 kΩ
T
j
= 25 °C 5 µA
T
j
= 125 °C 500
µA
