FDS4935

June 2001
2003 Fairchild Semiconductor Corporation
FDS4935 Rev B(W)
FDS4935
Dual 30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–7 A, –30 V R
DS(ON)
= 23 m @ V
GS
= –10 V
R
DS(ON)
= 35 m @ V
GS
= –4.5 V
Low gate charge (15nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage
±25
V
I
D
Drain Current – Continuous
(Note 1a)
–7 A
Pulsed –30
P
D
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
P
D
(Note 1c)
0.9
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4935 FDS4935 13’’ 12mm 2500 units
FDS4935
FDS4935 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–30 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –24 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= –25 V, V
DS
= 0 V –100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= 25 V, V
DS
= 0 V 100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–1 –1.6 –3 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
4.4
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V, I
D
= –7 A
V
GS
= –4.5 V, I
D
= –5.5 A
V
GS
= –10 V, I
D
= –7 A, T
J
=125°C
19
28
26
23
35
34
m
I
D(on)
On–State Drain Current V
GS
= –10 V, V
DS
= –5 V –30 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –7 A 19 S
Dynamic Characteristics
C
iss
Input Capacitance 1233 pF
C
oss
Output Capacitance 311 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
152 pF
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 13 23 ns
t
r
Turn–On Rise Time 10 20 ns
t
d(off)
Turn–Off Delay Time 48 77 ns
t
f
Turn–Off Fall Time
V
DD
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
25 40 ns
Q
g
Total Gate Charge 15 21 nC
Q
gs
Gate–Source Charge 4.4 nC
Q
gd
Gate–Drain Charge
V
DS
= –15 V, I
D
= –7 A,
V
GS
= –5 V
4.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –2.1 A
(Note 2)
–0.75 –1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in
2
pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4935
FDS4935 Rev B(W)
Typical Characteristics
0
10
20
30
40
50
012345
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -10V
-4.0V
-3.0V
-3.5V
-4.5V
-6.0V
-5.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 1020304050
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5V
-10V
-5.0V
-4.0V
-4.5V
-6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -7A
V
GS
= -10V
0
0.02
0.04
0.06
0.08
246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
12345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C 25
o
C
125
o
C
V
DS
= -5.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935

FDS4935

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 2P-CH 30V 7A 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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