TBAT54,TBAT54A,TBAT54C,TBAT54S
2
5.
5.
5.
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
D
T
j
T
stg
Note
(Note 3)
(Note 3)
(Note 1), (Note 3)
(Note 2), (Note 3)
Rating
35
30
200
300
1
320
150
-55 to 150
Unit
V
mA
A
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse.
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.42 mm
2
× 3)
Note 3: Unit rating. Total rating = unit rating × 1.5 (TBAT54A,TBAT54C), Total rating = unit rating × 0.7 (TBAT54S)
6.
6.
6.
6. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Forward voltage
Reverse current
Reverse recovery time
Symbol
V
F
I
R
t
rr
Test Condition
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
R
= 25 V
I
F
= 10 mA
Min
Typ.
0.16
0.21
0.28
0.37
0.45
0.6
1.5
Max
0.32
0.39
0.50
0.58
2
Unit
V
µA
ns
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (t
Reverse recovery time (t
rr
rr
rr
rr
) test circuit
) test circuit
) test circuit
) test circuit
7.
7.
7.
7. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
• Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs
more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both
forward and reverse power losses of SBDs should be considered for thermal and safety design.
2016-05-12
Rev.1.0
©2016 Toshiba Corporation
