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APT2X60D120J

P1-P3P4-P4
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifiers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT2X61D120J 1200V 53A
APT2X60D120J 1200V 53A
053-0012 Rev F 10-2005
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
New Diode Data Sheet By Darel Bidwell
®
APT Website - http://www.advancedpower.com
Anti-Parallel Parallel
2
1
32 3
41 4
APT2X60D120J APT2X61D120J
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
µA
pF
MIN TYP MAX
2.0 2.5
2.3
1.8
250
500
60
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 60A
I
F
= 120A
I
F
= 60A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 101°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
T
J
,T
STG
T
L
UNIT
Volts
Amps
°C
APT2X61_60D120J
1200
53
75
540
-55 to 175
300
DUAL DIE ISOTOP
®
PACKAGE
S
O
T
-
2
2
7
ISOTOP
®
1
2
3
4
file # E145592
"UL Recognized"
APT2X61_60D120J
DYNAMIC CHARACTERISTICS
053-0012 Rev F 10-2005
APT Reserves the right to change, without notice, the specifications and information contained herein.
New Diode Data Sheet By Darel Bidwell
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
MIN TYP MAX
- 38
- 400
- 1200
- 6 -
-
470
- 4000
-
13 -
- 200
- 6200
- 47
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 25°C
I
F
= 60A, di
F
/dt = -200A/µs
V
R
= 800V, T
C
= 125°C
I
F
= 60A, di
F
/dt = -1000A/µs
V
R
= 800V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/µs, V
R
= 30V, T
J
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
R
θJC
V
Isolation
W
T
Torque
MIN TYP MAX
.56
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
0.148
0.238
0.174
0.006
0.0909
0.524
Power
(watts)
Junction
temp (°C)
RC MODEL
Case temperature (°C)
053-0012 Rev F 10-2005
APT2X61_60D120J
TYPICAL PERFORMANCE CURVES
T
J
= 125°C
V
R
= 800V
600
500
400
300
200
100
0
50
40
30
20
10
0
Duty cycle = 0.5
T
J
= 175°C
90
80
70
60
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
600
500
400
300
200
100
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/
µs)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
T
J
= 150°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
30A
60A
120A
T
J
= 125°C
V
R
= 800V
120A
30A
60A
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs) -di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
0 0.5 1 1.5 2 2.5 3 3.5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
200
180
160
140
120
100
80
60
40
20
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
T
J
= 125°C
V
R
= 800V
120A
60A
30A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
P1-P3P4-P4

APT2X60D120J

Mfr. #:
Buy APT2X60D120J
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Lifecycle:
New from this manufacturer.
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