BAS86-M
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 21-Jan-13
1
Document Number: 83402
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION REMARKS
BAS86-M BAS85-M-18 or BAS86-M-08 Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Continuous reverse voltage V
R
50 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
t
p
1 s, 0.5 I
FRM
500 mA
Power dissipation
(1)
P
tot
200 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
j
125 °C
Ambient operating temperature range T
amb
- 65 to + 125 °C
Storage temperature range T
S
- 65 to + 150 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA (pulsed) V
(BR)
50 V
Leakage current V
R
= 40 V I
R
5μA
Forward voltage
Pulse test t
p
< 300 μs, I
F
= 0.1 mA, < 2 % V
F
200 300 mV
Pulse test t
p
< 300 μs, I
F
= 1 mA, < 2 % V
F
275 380 mV
Pulse test t
p
< 300 μs, I
F
= 10 mA, < 2 % V
F
365 450 mV
Pulse test t
p
< 300 μs, I
F
= 30 mA, < 2 % V
F
460 600 mV
Pulse test t
p
< 300 μs, I
F
= 100 mA, < 2 % V
F
700 900 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
8pF
Reverse recovery time I
F
= 10 mA, I
R
= 10 mA, i
R
= 1 mA t
rr
5ns
