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HMC407MS8GE

P1-P3P4-P6P7-P7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 28
LINEAR & POWER AMPLIFIERS - SMT
General Description
Features
Functional Diagram
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power ampli ers which
operate between 5 and 7 GHz. The ampli er requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
ampli er is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The ampli er
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the ampli er is not in use.
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
Electrical Speci cations, T
A
= +25° C, Vs = 5V, Vpd = 5V
Typical Applications
This ampli er is ideal for use as a power
ampli er for 5 - 7 GHz applications:
• UNII
• HiperLAN
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 5 - 7 5.6 - 6.0 GHz
Gain 10 15 18 12 15 18 dB
Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C
Input Return Loss 12 12 dB
Output Return Loss 15 15 dB
Output Power for 1 dB Compression (P1dB) 21 25 22 25 dBm
Saturated Output Power (Psat) 29 29 dBm
Output Third Order Intercept (IP3) 32 37 36 40 dBm
Noise Figure 5.5 5.5 dB
Supply Current (Icq) Vpd = 0V/5V 0.002 / 230 0.002 / 230 mA
Control Current (Ipd) Vpd = 5V 7 7 mA
Switching Speed tON, tOFF 30 30 ns
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC407* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
• HMC407MS8G Evaluation Board
DOCUMENTATION
Application Notes
• AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
• Broadband Biasing of Amplifiers General Application Note
• MMIC Amplifier Biasing Procedure Application Note
• Thermal Management for Surface Mount Components
General Application Note
Data Sheet
• HMC407 Data Sheet
TOOLS AND SIMULATIONS
• HMC407 S-Parameter
REFERENCE MATERIALS
Quality Documentation
• HMC Legacy PCN: MS##, MS##E and MS##G,MS##GE
packages - Relocation of pre-existing production
equipment to new building
• Package/Assembly Qualification Test Report: MS8G (QTR:
2014-00393)
• PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
• Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
• HMC407 Material Declaration
• PCN-PDN Information
• Quality And Reliability
• Symbols and Footprints
DISCUSSIONS
View all HMC407 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 29
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Los
s Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
2345678910
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
14
18
22
26
30
34
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
14
18
22
26
30
34
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
4 4.5 5 5.5 6 6.5 7 7.5 8
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
v03.1006
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6P7-P7

HMC407MS8GE

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Buy HMC407MS8GE
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier InGaP HBT pow amp SMT, 5 - 7 GHz
Lifecycle:
New from this manufacturer.
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