SiR873DP
www.vishay.com
Vishay Siliconix
S17-1080-Rev. A, 17-Jul-17
1
Document Number: 75954
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 150 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Very low R
DS(ON)
minimizes power loss
from conduction
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Active clamp in DC/DC
power supplies
• Battery protection
•Load switch
• Motor drive control
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 54 °C/W
g. T
C
= 25 °C
PRODUCT SUMMARY
V
DS
(V) -150
R
DS(on)
max. (Ω) at V
GS
= 10 V 0.0475
Q
g
typ. (nC) 31.8
I
D
(A) -29
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free SiR873DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-150
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
-37
A
T
C
= 70 °C -29.6
T
A
= 25 °C -9
b, c
T
A
= 70 °C -7.2
b, c
Pulsed drain current (t = 100 μs) I
DM
50
Continuous source-drain diode current
T
C
= 25 °C
I
S
37
T
A
= 25 °C 5.6
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
-40
Single pulse avalanche energy E
AS
80 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
104
W
T
C
= 70 °C 66.6
T
A
= 25 °C 6.25
b, c
T
A
= 70 °C 4
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b
t ≤ 10 s R
thJA
15 20
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
0.9 1.2