UG06A, UG06B, UG06C, UG06D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 88757
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Soft recovery characteristics
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
MECHANICAL DATA
Case: MPG06
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
I
F(AV)
0.6 A
V
RRM
50 V, 100 V, 150 V, 200 V
I
FSM
40 A
t
rr
15 ns
V
F
0.95 V
T
J
max. 150 °C
Package MPG06
Diode variations Single die
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG06A UG06B UG06C UG06D UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200
VMaximum RMS voltage V
RMS
35 70 105 140
Maximum DC blocking voltage V
DC
50 100 150 200
Maximum average forward rectified current (fig. 1) I
F(AV)
0.6
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
40
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous
forward voltage
I
F
= 0.6 A V
F
(1)
0.95 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 100 °C 100
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
15
ns
Maximum reverse recovery time I
F
= 0.6 A, V
R
= 30 V, dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
25
T
J
= 100 °C 35
Maximum stored charge I
F
= 0.6 A, V
R
= 30 V, dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
8.0
nC
T
J
= 100 C 20
Typical junction capacitance 4 V, 1 MHz C
J
9.0 pF
