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Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

I , Drain-to-Source Current (A)

D

V , Drain-to-Source Voltage (V)

DS

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

20μs PULSE WIDTH

T = 25°C

C

A

4.5V

1

10

100

1000

0.1 1 10 100

4.5V

I , Drain-to-Source Current (A)

D

V , Drain-to-Source Voltage (V)

DS

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

20μs PULSE WIDTH

T = 175°C

C

A

0.0

0.5

1.0

1.5

2.0

2.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

V = 10V

GS

A

I = 46A

D

1

10

100

1000

45678910

T = 25°C

J

GS

V , Gate-to-Source Voltage (V)

D

I , Drain-to-Source Current (A)

T = 175°C

J

A

V = 25V

20μs PULSE WIDTH

DS

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output Characteristics

T

J

= 25°C

T

J

= 175°C

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Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

4

8

12

16

20

0 102030405060

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

I = 28A

D

DS

DS

1

10

100

1000

0.4 0.8 1.2 1.6 2.0 2.4

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10μs

100μs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

0

400

800

1200

1600

2000

2400

2800

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

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Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

T

C

, Case Temperature (°C)

0

10

20

30

40

50

60

I

D

,

D

r

a

i

n

C

u

r

r

e

n

t

(

A

)

Limited By Package

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

AUIRFZ46NL

Mfr. #:

Manufacturer:

Infineon / IR

Description:

MOSFET 55V, 53A, 16.5mOhm Automotive MOSFET

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

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