BAS21SLT1

© Semiconductor Components Industries, LLC, 2000
October, 2016 Rev. 7
1 Publication Order Number:
BAS21SLT1/D
BAS21SLT1G,
NSVBAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: Class 1
ESD Rating Machine Model: Class B
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
250 Vdc
Repetitive Peak Reverse Voltage V
RRM
250 Vdc
Peak Forward Current I
F
225 mAdc
Peak Forward Surge Current I
FM(surge)
625 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR 5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
R
JA
417 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 11
MARKING DIAGRAM
1
2
3
3
CATHODE/ANODE
ANODE
1
CATHODE
2
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21SLT1G SOT23
(PbFree)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
JT M G
G
JT = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
NSVBAS21SLT1G SOT23
(PbFree)
3000 / Tape & Reel
BAS21SLT1G, NSVBAS21SLT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
I
R
0.1
100
Adc
Reverse Breakdown Voltage
(I
BR
= 100 Adc)
V
(BR)
250 Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
5.0 pF
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100 )
t
rr
50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage Figure 3. Reverse Leakage
7000
REVERSE VOLTAGE (V)
5000
3000
5
0
21
6000
4000
6
5 10 20 50 100 200
1
2
3
4
30
0
T
A
= 155°C
T
A
= 25°C
T
A
= 55°C
REVERSE CURRENT (nA)
FORWARD CURRENT (mA)
T
A
= 55°C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
155°C
25°C
BAS21SLT1G, NSVBAS21SLT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
E
E
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b 0.37 0.44 0.50 0.015
c 0.08 0.14 0.20 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
H
E
0.35 0.54 0.69 0.014 0.021 0.027
c
0 −−− 10 0 −−− 10
T
°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X
0.95
RECOMMENDED
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Phone: 81358171050
BAS21SLT1/D
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BAS21SLT1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
DIODE ARRAY GP 250V 225MA SOT23
Lifecycle:
New from this manufacturer.
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