DMN2020LSN-7 Datasheet DMN2020LSN-7 | P1-P3

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

1 of 6

www.diodes.com

August 2011

DMN2020LSN

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2KV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC-59

• Case Material - Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.014 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage Continuous

V

GSS

±12 V

Continuous Drain Current

Steady

State

T

A

= 25°C

T

A

= 85°C

I

D

6.9

4.5

A

Pulsed Drain Current (Note 4)

I

DM

30 A

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation (Note 3)

P

D

0.61 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 3)

R

θ

JA

204

°C /W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

SC-59

TOP VIEW

Pin Out Confi

g

uration

TOP VIEW

EQUIVALENT CIRCUIT

Source

Gate

Protection

Diode

Gate

Drain

D

G

S

ESD PROTECTED TO 2kV

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

2 of 6

www.diodes.com

August 2011

DMN2020LSN

NEW PRODUCT

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage BV

DSS

20 - - V V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- - 1.0

μA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage I

GSS

- - ±10

μA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage V

GS

(

th

)

0.5 1.0 1.5 V V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance R

DS (ON)

-

13

18

20

28

mΩ

V

GS

= 4.5V, I

D

= 9.4A

V

GS

= 2.5V, I

D

= 8.3A

Forward Transfer Admittance |Y

fs

| - 16 - S V

DS

= 5V, I

D

= 9.4A

Diode Forward Voltage V

SD

- 0.7 1.2 V V

GS

= 0V, I

S

= 1.3A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance C

iss

- 1149 - pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance C

oss

- 157 - pF

Reverse Transfer Capacitance C

rss

- 142 - pF

Gate Resistance R

g

- 1.51 -

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge Q

g

- 11.6 - nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 9.4A

Gate-Source Charge Q

g

s

- 2.7 - nC

Gate-Drain Charge Q

g

d

- 3.4 - nC

Turn-On Delay Time t

D

(

on

)

- 11.67 - ns

V

DD

= 10V, V

GS

= 4.5V,

R

GEN

= 6Ω, I

D

= 1A

Turn-On Rise Time t

r

- 12.49 - ns

Turn-Off Delay Time t

D

(

off

)

- 35.89 - ns

Turn-Off Fall Time t

f

- 12.33 - ns

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

0

5

10

15

20

0 0.5 1 1.5 2

Fig. 1 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 1.5V

GS

V = 1.8V

GS

V = 2.0V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 4.5V

GS

V = 8.0V

GS

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I, D

R

AIN

C

U

R

EN

T

(A)

D

V = 10V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A

DMN2020LSN

Document number: DS31946 Rev. 3 - 2

3 of 6

www.diodes.com

August 2011

DMN2020LSN

NEW PRODUCT

0

0.01

0.02

0.03

0.04

0.05

0.06

02 468101214161820

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

V = 1.8V

GS

V = 4.5V

GS

V = 2.5V

GS

0

0.01

0.02

0.03

0.04

0 2 4 6 8 101214 161820

I , DRAIN CURRENT (A)

Fig. 4 Typical Drain-Source On-Resistance

vs. Drain Current and Temperature

D

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(ON)

Ω

V = 4.5V

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = 2.5V

I = 150mA

GS

D

V = 4.5V

I = 500mA

GS

D

0

0.01

0.02

0.03

0.04

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

V = 4.5V

I = 10A

GS

D

V = 2.5V

I = 5A

GS

D

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0

5

10

15

20

0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

I, S

O

U

R

C

E

C

U

R

EN

T

(A)

S

T = 25°C

A

DMN2020LSN-7

DMN2020LSN-7

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