OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN3067LW-13

P1-P3P4-P6
DMN3067LW
Document number: DS36640 Rev. 4 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN3067LW
NEW PRODUCT
ADVANCED INFORMATION
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
30V
67mΩ @ V
GS
= 4.5V
2.6A
70mΩ @ V
GS
= 4.0V
2.5A
98mΩ @ V
GS
= 2.5V
2.2A
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Switching
Power Management Functions
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN3067LW-7 SOT323 3000/Tape & Reel
DMN3067LW-13 SOT323 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT323
Top View
N30 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y
̅
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
D
G
S
Top View
Pin Configuration
Equivalent Circuit
ESD PROTECTED
Chengdu A/T Site
Shanghai A/T Site
DMN3067LW
Document number: DS36640 Rev. 4 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN3067LW
NEW PRODUCT
ADVANCED INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.6
2.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
10 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.5
W
(Note 6) 1.1
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
241
°C/W
(Note 6) 130
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V,
I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 30V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±10 μA
V
GS
=
±12V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
1.5 V
V
DS
= V
GS
,
I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
48 67
mΩ
V
GS
= 4.5V,
I
D
=
2.5A

50 70
V
GS
= 4.0V,
I
D
=
2.5A

70 98
V
GS
= 2.5V,
I
D
=
2.5A
Diode Forward Voltage
V
SD

1.2 V
V
GS
= 0V, I
S
= 0.6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
447
pF
V
DS
= 10V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
54
Reverse Transfer Capacitance
C
rss
41
Gate Resistance
R
G

23

Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
4.6
nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 2.5A
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
1.0
Turn-On Delay Time
t
D(on)
3.8
nS
V
DD
= 15V, I
D
= 1.25A,
V
GEN
= 4.5V
,
R
GEN
= 10Ω
Turn-On Rise Time
t
r
5.2
Turn-Off Delay Time
t
D(off)

15

Turn-Off Fall Time
t
f

6.1

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN3067LW
Document number: DS36640 Rev. 4 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN3067LW
NEW PRODUCT
ADVANCED INFORMATION
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
00.511.522.53
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 3.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
ENT (A)
D
V= 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.03
0.035
0.04
0.045
0.05
0.055
0.06
012345678910
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
V= 4.5V
GS
V = 10V
GS
0
0.2
0.4
0.6
0.8
1
024681012
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
I= 2.5A
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
012345678910
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.4
0.8
1.2
1.6
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V=.5V
I= 1.0A
GS
D
2
V= V
I= 2.0A
GS
D
4.0
P1-P3P4-P6

DMN3067LW-13

Mfr. #:
Buy DMN3067LW-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet