SPEC NO: DSAB7473 REV NO: V.8 DATE: JAN/22/2011 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.H.Wu ERP: 1301000446
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Min. Typ.
SA40-19EWA High Efficiency Red (GaAsP/GaP) White Diffused 14000 23000
Common Anode, Rt.
Hand Decimal.
Description
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength High Efficiency Red 627 nm I
F=20mA
λD [1] Dominant Wavelength High Efficiency Red 625 nm I
F=20mA
Δλ1/2 Spectral Line Half-width High Efficiency Red 45 nm I
F=20mA
C Capacitance High Efficiency Red 15 pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
Per Segment Or (DP)
High Efficiency Red
8.0
(4.0)
10.0
(5.0)
V I
F=20mA
I
R
Reverse Current
Per Segment Or (DP)
High Efficiency Red
20
(10)
uA
V
R=5V
(V
R=5V)
Parameter Super Bright Green Units
Power dissipation
Per Segment Or (DP)
600
(150)
mW
DC Forward Current
Per Segment Or (DP)
60
(30)
mA
Peak Forward Current [1]
Per Segment Or (DP)
320
(160)
mA
Reverse Voltage
Per Segment Or (DP)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
