Data Sheet AD8022
Rev. C | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage (+V
S
to −V
S
) 26.4 V
Internal Power Dissipation
1
8-Lead SOIC (R) 1.6 W
8-Lead MSOP (RM) 1.2 W
Input Voltage (Common Mode) ±V
S
Differential Input Voltage ±0.8 V
Output Short-Circuit Duration Observe Power Derating Curves
Storage Temperature Range −65°C to +125°C
Operating Temperature Range
(A Grade)
−40°C to +85°C
Lead Temperature Range
(Soldering 10 sec)
300°C
1
Specification is for the device in free air:
8-Lead SOIC: θ
JA
= 160°C/W.
8-Lead MSOP: θ
JA
= 200°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8022 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Temporarily exceeding this limit may cause a shift in
parametric performance due to a change in the stresses exerted
on the die by the package. Exceeding a junction temperature of
175°C for an extended period can result in device failure.
While the AD8022 is internally short-circuit protected, this may
not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions. To
ensure proper operation, it is necessary to observe the
maximum power derating curves.
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
2.0
1.5
1.0
0.5
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
01053-003
T
J
= 150°C
8-LEAD SOIC PACKAGE
8-LEAD MSOP
Figure 3. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
AD8022 Data Sheet
Rev. C | Page 6 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
FREQUENCY (MHz)
(dB)
5
2
1
3
4
0
–5
–4
–3
–2
–1
0.1 1 10 100 500
01053-004
R
F
50Ω
50Ω
50Ω
V
IN
V
OUT
R
F
= 715Ω
R
F
= 0Ω
R
F
= 402Ω
Figure 4. Frequency Response vs. R
F
, G = +1, V
S
= ±12 V, V
IN
= 63 mV p-p
FREQUENCY (Hz)
(dB)
0.4
0.1
0
0.2
0.3
–0.1
–0.6
–0.5
–0.4
–0.3
–0.2
100k 1M 10M 100M
01053-005
G = +2
R
L
= 500Ω
±12V
±5.0V
±2.5V
Figure 5. Fine-Scale Gain Flatness vs. Frequency, G = +2
FREQUENCY (Hz)
(dB)
0.4
0.1
0
0.2
0.3
–0.1
–0.6
–0.5
–0.4
–0.3
–0.2
100k 1M 10M 100M
01053-006
G = +2
R
L
= 500Ω
±12V
±5.0V
±2.5V
Figure 6. Fine-Scale Gain Flatness vs. Frequency, G = +1
FREQUENCY (MHz)
(dB)
5
2
1
3
4
0
–5
–4
–3
–2
–1
0.1 1 10 100 500
01053-007
402Ω
453Ω
56.2Ω
50Ω
V
IN
V
OUT
V
IN
= 0.05V p-p
V
IN
= 0.2V p-p
V
IN
= 2.0V p-p
V
IN
= 0.8V p-p
V
IN
= 0.4V p-p
Figure 7. Frequency Response vs. Signal Level, V
S
= ±12 V, G = +1
FREQUENCY (kHz)
FREQUENCY RESPONCE (dB)
5
2
1
3
4
0
–5
–4
–3
–2
–1
0.1 1 10 100 500
01053-008
453Ω
715Ω
715Ω
56.2Ω
50Ω
V
IN
V
OUT
R
S
C
L
50pF
30pF
0pF
Figure 8. Frequency Response vs. Capacitive Load; C
L
= 0 pF and 50 pF; R
S
= 0 Ω
SUPPLY VOLTAGE (±V)
FREQUENCY (MHz)
140
80
60
100
120
40
0
20
0 2 4 6 8 10 12 14
01053-009
G = +1, R
F
= 402Ω
G = +2, R
F
= 715Ω
Figure 9. Bandwidth vs. Supply, R
L
= 500 Ω, V
IN
= 200 mV p-p
Data Sheet AD8022
Rev. C | Page 7 of 16
FREQUENCY (Hz)
GAIN (dB)
80
30
60
50
70
40
0
20
10
–10
5k 10k 100k 10M1M 100M 500M
01053-010
Figure 10. Open-Loop Gain vs. Frequency
FREQUENCY (Hz)
FREQUENCY (Degrees)
0
180
–180
5k 10k 100k 10M1M 100M 500M
01053-011
Figure 11. Open-Loop Phase vs. Frequency
01053-012
OUTPUT
INPUT
100mV
100mV
100ns
100
90
10
0%
Figure 12. Noninverting Small Signal Pulse Response,
R
L
= 500 Ω, V
S
= ±12 V, G = +1, R
F
= 0 Ω
01053-013
OUTPUT
INPUT
100mV
100mV
100ns
100
90
10
0%
Figure 13. Noninverting Small Signal Pulse Response,
R
L
= 500 Ω, V
S
= ±2.5 V, G = +1, R
F
= 0 Ω
01053-014
OUTPUT
INPUT
2.00V
2.00V
100ns
100
90
10
0%
Figure 14. Noninverting Large Signal Pulse Response,
R
L
= 500 Ω, V
S
= ±12 V, G = +1, R
F
= 0 Ω
01053-015
OUTPUT
INPUT
1.00V
1.00V
100ns
100
90
10
0%
Figure 15. Noninverting Large Signal Pulse Response,
R
L
= 500 Ω, V
S
= ±2.5 V, G = +1, R
F
= 0 Ω

AD8022ARMZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers Dual Hi Spd Lo Noise
Lifecycle:
New from this manufacturer.
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