OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-2EMH02-M3/5AT

P1-P3P4-P6
VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Feb-15
1
Document Number: 95832
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element.
PRODUCT SUMMARY
Package SMA (DO-214AC)
I
F(AV)
2 A
V
R
200 V
V
F
at I
F
0.75 V
t
rr
25 ns
T
J
max. 175 °C
Diode variation Single die
Cathode Anode
SMA (DO-214AC)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
T
Sp
= 138 °C 2
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C, 6 ms square pulse 50
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 200 - -
V
Forward voltage, per diode V
F
I
F
= 2 A - 0.88 0.95
I
F
= 2 A, T
J
= 125 °C - 0.75 0.82
Reverse leakage current, per diode I
R
V
R
= V
R
rated - - 2
μA
T
J
= 125 °C, V
R
= V
R
rated - 1 8
Junction capacitance C
T
V
R
= 200 V - 8 - pF
VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Feb-15
2
Document Number: 95832
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 24 -
ns
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A - - 25
T
J
= 25 °C
I
F
= 2 A,
dI
F
/dt = 200 A/μs,
V
R
= 160 V
-16-
T
J
= 125 °C - 22 -
Peak recovery current I
RRM
T
J
= 25 °C - 2 -
A
T
J
= 125 °C - 3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 16 -
nC
T
J
= 125 °C - 30 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance, junction to case R
thJC
Device mounted on PCB with 2 x 3.5 mm
soldering lands
-1121°C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (DO-214AC) 2H2
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
050100150200
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
Revision: 10-Feb-15
3
Document Number: 95832
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
1
10
100
0 50 100 150 200
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
130
140
150
160
170
180
0 0.5 1 1.5 2 2.5
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
Rated V
R
applied
See note
(1)
DC
0
0.5
1
1.5
2
2.5
3
00.511.522.533.5
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
0
5
10
15
20
25
30
35
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 °C
10
15
20
25
30
35
40
45
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6

VS-2EMH02-M3/5AT

Mfr. #:
Buy VS-2EMH02-M3/5AT
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers fred 200V 2A - SMA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet