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AUIRF7478Q

P1-P3P4-P6P7-P9
AUIRF7478Q
4 2015-9-30
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 10 20 30 40
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
4.2A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
AUIRF7478Q
5 2015-9-30
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF7478Q
6 2015-9-30
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Fig 12. Typical On-Resistance Vs.
Drain Current
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
0 102030405060
I
D
, Drain Current (A)
0.016
0.018
0.020
0.022
0.024
0.026
0.028
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
V
GS
= 10V
V
GS
= 4.5V
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS,
Gate -to -Source Voltage (V)
0.01
0.02
0.03
0.04
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
)
I
D
= 7.0A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
1.9A
3.4A
4.2A
P1-P3P4-P6P7-P9

AUIRF7478Q

Mfr. #:
Buy AUIRF7478Q
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET N ch 60V, 7A, 26mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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