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AUIRF7478QTR

P1-P3P4-P6P7-P9
AUIRF7478Q
V
DSS
60V
R
DS(on)
typ.
20m
I
D
7.0A
max.
26m
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-9-30
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 60
V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 7.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 5.6
I
DM
Pulsed Drain Current 56
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 140
mJ
I
AR
Avalanche Current 4.2 A
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
Operating Junction and -55 to + 150
°C
T
STG
Storage Temperature Range
A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
R
JL
Junction-to-Drain Lead ––– 20
R
JA
Junction-to-Ambient ––– 50
SO-8
AUIRF7478Q
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRF7478Q SO-8 Tape and Reel 4000 AUIRF7478QTR
G D S
Gate Drain Source
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
AUIRF7478Q
2 2015-9-30
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 16mH, R
G
= 25, I
AS
= 4.2A.
Pulse width 400µs; duty cycle 2%.
When mounted on 1" in square copper board.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
I
SD
4.2A, di/dt 160A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 20 26
m
V
GS
= 10V, I
D
= 4.2A 
––– 23 30 V
GS
= 4.5V, I
D
= 3.5A 
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 17 ––– ––– S V
DS
= 50V, I
D
= 4.2A
I
DSS
Drain-to-Source Leakage Current
––– ––– 20
µA
V
DS
= 48V, V
GS
= 0V
––– ––– 100 V
DS
= 48V,V
GS
= 0V,T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– 21 31
nC
I
D
= 4.2A
Q
gs
Gate-to-Source Charge ––– 4.3 –––
V
DS
= 48V
Q
gd
Gate-to-Drain Charge ––– 9.6 –––
V
GS
= 4.5V
t
d(on)
Turn-On Delay Time ––– 7.7 –––
ns
V
DD
= 30V
t
r
Rise Time ––– 2.6 ––– I
D
= 4.2A
t
d(off)
Turn-Off Delay Time ––– 44 –––
R
G
= 6.2
t
f
Fall Time ––– 13 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 1740 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 300 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 37 –––
ƒ = 1.0MHz
C
oss
Output Capacitance ––– 1590 ––– V
GS
= 0V,V
DS
= 1.0V,ƒ = 1.0MHz
C
oss
Output Capacitance ––– 220 ––– V
GS
= 0V,V
DS
= 48V,ƒ = 1.0MHz
C
oss
Output Capacitance ––– 410 ––– V
GS
= 0V,V
DS
= 0V to 48V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 2.3
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 56
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 4.2A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 52 78 ns
T
J
= 25°C ,I
F
= 4.2A,
Q
rr
Reverse Recovery Charge ––– 100 150 nC
di/dt = 100A/µs 
AUIRF7478Q
3 2015-9-30
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.7V
2.5 3.0 3.5 4.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
20µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
7.0A
P1-P3P4-P6P7-P9

AUIRF7478QTR

Mfr. #:
Buy AUIRF7478QTR
Manufacturer:
Infineon / IR
Description:
MOSFET Automotive MOSFET N ch 60V, 7A, 26mOhm
Lifecycle:
New from this manufacturer.
Delivery:
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