20ETF08STRL

Document Number: 93141 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 1
Fast Soft Recovery
Rectifier Diode, 20 A
20ETF..S Soft Recovery Series
Vishay High Power Products
FEATURES/DESCRIPTION
The 20ETF..S fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
This product series has been designed and qualified for
industrial level.
APPLICATIONS
Output rectification and freewheeling in inverters,
choppers and converters
Input rectifications where severe restrictions on conducted
EMI should be met
PRODUCT SUMMARY
V
F
at 20 A < 1.31 V
I
FSM
355 A
V
RRM
800 to 1200 V
D
2
PAK (SMD-220)
Base
common
cathode
+
3
Anode
2
1
Anode
--
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 20 A
V
RRM
800 to 1200 V
I
FSM
355 A
V
F
20 A, T
J
= 25 °C 1.31 V
t
rr
1 A, 100 A/µs 95 ns
T
J
Range - 40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
20ETF08S 800 900
620ETF10S 1000 1100
20ETF12S 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 300
10 ms sine pulse, no voltage reapplied 355
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 450
A
2
s
10 ms sine pulse, no voltage reapplied 635
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 6350 A
2
s
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93141
2 Revision: 22-Oct-08
20ETF..S Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 20 A
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.31 V
Forward slope resistance r
t
T
J
= 150 °C
11.88 mΩ
Threshold voltage V
F(TO)
0.93 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 6
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 20 Apk
25 A/µs
25 °C
400 ns
Reverse recovery current I
rr
6.1 A
Reverse recovery charge Q
rr
1.7 µC
Snap factor S Typical 0.6
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.9
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
62
Soldering temperature T
S
240 °C
Approximate weight
2g
0.07 oz.
Marking device Case style D
2
PAK (SMD-220)
20ETF08S
20ETF10S
20ETF12S
Document Number: 93141 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 22-Oct-08 3
20ETF..S Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
150
0
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
5
100
10 25
120
130
110
15
20
140
Conduction angle
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
30°
60°
90°
120°
180°
Ø
150
025
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
15
530
110
35
120
100
10 20
130
140
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
DC
10
0
35
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20
25
25
30
20
10 155
5
15
Conduction angle
20ETF.. Series
T
J
= 150 °C
RMS limit
180°
120°
90°
60°
30°
Ø
10
0
45
0
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
25
35
15
10 255
15
5
20
35
20
30
40
30
RMS limit
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
180°
120°
90°
60°
30°
DC
350
50
1 10 100
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
20ETF.. Series
300
150
50
0.01 0.1 1
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
400
20ETF.. Series
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied

20ETF08STRL

Mfr. #:
Manufacturer:
Vishay
Description:
DIODE GEN PURP 800V 20A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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