BUK7610-55AL_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 9 January 2008 3 of 13
NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
[1] Current is limited by power dissipation chip rating.
[2] Refer to document 9397 750 12572 for further information.
[3] Continuous current is limited by package.
[4] Single shot avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
003aaa726
0
50
100
150
0 50 100 150 200
T
mb
(
°
C)
I
D
(A)
(1)
03aa16
0
40
80
120
0 50 100 150 200
T
mb
(
°
C)
P
der
(%)
V
GS
10V
(1) Capped at 75 A due to package.
P
der
=
P
tot
P
tot
(
25°C
)
× 100 %
003aaa739
10
-1
1
10
10
2
10
-2
10
-1
1 10
t
AV
(ms)
I
AV
(A)
T
j
= 25 ˚C
150 ˚C
(3)
(2)
(1)
(1) Singleíshot.
(2) Singleíshot.
(3) Repetitive.
