4N35-000E Datasheet 4N35-300E, 4N35-500E, 4N35-000E | P4-P6

4

Absolute Maximum Ratings

Storage Temperature, T

S

–55˚C to +150˚C

Operating Temperature, T

A

–55˚C to +100˚C

Lead Solder Temperature, max. 260˚C for 10 s

(1.6 mm below seating plane)

Average Forward Current, I

F

60 mA

Reverse Input Voltage, V

R

6 V

Input Power Dissipation, P

I

100 mW

Collector Current, I

C

100 mA

Collector-Emitter Voltage, V

CEO

30 V

Emitter-Collector Voltage, V

ECO

7 V

Collector-Base Voltage, V

CBO

70 V

Collector Power Dissipation 300 mW

Total Power Dissipation 350 mW

Isolation Voltage, V

iso

3550 Vrms

(AC for 1 minute, R.H. = 40 ~ 60%)

30 seconds

60 ~ 150 sec 90 sec 60 sec

60 sec

25°C

150°C

200°C

250°C

260°C (Peak Temperature)

217°C

Time (sec)

Temperature

(

°

C)

Solder Reow Temperature Prole

1) One-time soldering reow is recommended within

the condition of temperature and time prole shown

at right.

2) When using another soldering method such as in-

frared ray lamp, the temperature may rise partially

in the mold of the device. Keep the temperature on

the package of the device within the condition of (1)

above.

Note: Non-halide ux should be used.

Figure 1. Forward current vs. temperature.

Figure 2. Collector power dissipation vs. temperature. Figure 3. Forward current vs. forward voltage.

I

F

– FORWARD CURRENT – mA

0

T

A

– AMBIENT TEMPERATURE – °C

-25 75 125

60

25

20

40

100

0 50 100-55

80

4N35 fig 1

P

C

– COLLECTOR POWER DISSIPATION – mW

0

T

A

– AMBIENT TEMPERATURE – °C

-25 75 125

200

25

100

400

0 50 100-55

300

4N35 fig 2

I

F

– FORWARD CURRENT – mA

1

V

F

– FORWARD VOLTAGE – V

2.0 3.0

10

5

500

1.00

4N35 fig 3

T

A

= 75°C

0.5 1.5 2.5

2

20

50

100

200

T

A

= 50°C

T

A

= 25°C

T

A

= 0°C

T

A

= -25°C

* CTR = x 100%

I

C

I

F

Electrical Specications (T

A

= 25˚C)

Parameter Symbol Min. Typ. Max. Units Test Conditions

Forward Voltage V

F

– 1.2 1.5 V I

F

= 10 mA

Reverse Current I

R

– – 10 µA V

R

= 4 V

Terminal Capacitance C

t

– 50 – pF V = 0, f = 1 KHz

Collector Dark Current I

CEO

– – 50 nA V

CE

= 10 V, I

F

= 0, T

A

= 25˚C

– – 500 µA V

CE

= 30 V, I

F

= 0, T

A

= 100˚C

Collector-Emitter Breakdown Voltage BV

CEO

30 – V I

C

= 0.1 mA, I

F

= 0

Emitter-Collector Breakdown Voltage BV

ECO

7 – – V I

E

= 10 µA, I

F

= 0

Collector-Base Breakdown Voltage BV

CBO

70 – – V I

C

= 0.1 mA, I

F

= 0

Collector Current I

C

10 – – mA I

F

= 10 mA

*Current Transfer Ratio CTR 100 – – % V

CE

= 10 V

Collector-Emitter Saturation Voltage V

CE(sat)

– – 0.3 V I

F

= 50 mA, I

C

= 2 mA

Response Time (Rise) t

r

– 3 10 µs V

CC

= 10 V, I

C

= 2 mA

Response Time (Fall) t

f

– 3 10 µs R

L

= 100 Ω

Isolation Resistance R

iso

5 x 10

10

1 x 10

11

– Ω DC 500 V

40 ~ 60% R.H.

Floating Capacitance C

f

– 1 2.5 pF V = 0, f = 1 MHz

6

Figure 4. Current transfer ratio vs. forward current. Figure 5. Collector current vs. collector-emitter volt-

age.

Figure 6. Relative current transfer ratio vs. tempera-

ture.

Figure 7. Collector-emitter saturation voltage vs.

temperature.

Figure 8. Collector dark current vs. temperature. Figure 9. Response time vs. load resistance.

I

C

– COLLECTOR CURRENT – mA

0

V

CE

– COLLECTOR-EMITTER VOLTAGE – V

10 15

20

10

30

50

4N35 fig 5

P

C

(MAX.)

T

A

= 25°C

I

F

= 15 mA

I

F

= 10 mA

I

F

= 5 mA

I

F

= 2 mA

RELATIVE CURRENT TRANSFER RATIO – %

0

100

50

150

4N35 fig 6

V

CE

= 10 V

I

F

= 10 mA

T

A

– AMBIENT TEMPERATURE – °C

-25 75250 50 100-55

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

0

T

A

– AMBIENT TEMPERATURE – °C

-25 7525

0.04

0.12

0 50 100-55

0.08

4N35 fig 7

0.02

0.06

0.10

I

C

= 2 mA

I

F

= 50 mA

RESPONSE TIME – µs

0.1

R

L

– LOAD RESISTANCE – kΩ

0.1 5

1

0.5

0.2

0.5

100

0.2 2 100.05

2

4N35 fig 9

20 50

V

CE

= 10 V

I

C

= 2 mA

T

A

= 25°C

tf

tr

1

5

10

20

50

200

td

ts

I

CEO

– COLLECTOR DARK CURRENT – A

10

-13

-25 80 1254020 60 100-55

4N35 fig 8

T

A

– AMBIENT TEMPERATURE – °C

V

CE

= 10 V

10

-12

10

-11

10

-10

10

-9

10

-8

10

-7

10

-6

5

CTR – CURRENT TRANSFER RATIO – %

0

I

F

– FORWARD CURRENT – mA

0.2 5 100

100

1

20

60

180

0.5 2 100.1

140

4N35 fig 4

V

CE

= 10 V

T

A

= 25°C

20 50

500 kΩ 100 kΩ

40

80

120

160

R

BE

=

Figure 11. Collector-emitter saturation voltage vs.

forward current.

Figure 10. Frequency response.

VOLTAGE GAIN AV – dB

-20

f – FREQUENCY – kHz

1 20 500

-5

5

-15

-10

5

2 10 500.5

0

4N35 fig 10

100 200

R

L

= 10 kΩ

V

CE

= 5 V

I

C

= 2 mA

T

A

= 25°C

R

L

= 1 kΩ

R

L

= 100 Ω

0

I

F

– FORWARD CURRENT – mA

10 15

2

7

50

4N35 fig 11

1

3

4

5

6

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

T

A

= 25°C

I

C

= 0.5 mA

I

C

= 1 mA

I

C

= 2 mA

I

C

= 3 mA

I

C

= 6 mA

I

C

= 7 mA

4N35-000E

4N35-000E

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