SI7802DN-T1-GE3 Datasheet SI7802DN-T1-GE3, SI7802DN-T1-E3 | P1-P3

Vishay Siliconix

Si7802DN

Document Number: 73133

S-83050-Rev. D, 29-Dec-08

www.vishay.com

1

N-Channel 250-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• PWM-Optimized TrenchFET

®

Power MOSFET

• Avalanche Tested

• 100 % R

g

Tested

APPLICATIONS

• Primary Side Switch

• Small DC/DC Circuits

• Single-Ended Primary Switching Circuits

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

250

0.435 at V

GS

= 10 V

1.95

0.445 at V

GS

= 6 V

1.9

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK

®

1212-8

Bottom View

Ordering Information: Si7802DN-T1-E3 (Lead (Pb)-free)

Si7802DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

250

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

1.95 1.24

A

T

A

= 70 °C

1.56 0.99

Pulsed Drain Current

I

DM

8

Continuous Source Current (Diode Conduction)

a

I

S

3.2 1.3

Single Avalanche Current

L = 0.1 mH

I

AS

2.5

Single Avalanche Energy

E

AS

0.3 mJ

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

3.8 1.5

W

T

A

= 70 °C

2.0 0.8

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b, c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

26 33

°C/W

Steady State 65 81

Maximum Junction-to-Case (Drain) Steady State

R

thJC

1.9 2.4

www.vishay.com

2

Document Number: 73133

S-83050-Rev. D, 29-Dec-08

Vishay Siliconix

Si7802DN

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

2.4 3.6 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 250 V, V

GS

= 0 V

1

µA

V

DS

= 250 V, V

GS

= 0 V, T

J

= 55 °C

5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

8A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 1.95 A

0.360 0.435

Ω

V

GS

= 6 V, I

D

= 1.9 A

0.370 0.445

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 1.95 A

8S

Diode Forward Voltage

a

V

SD

I

S

= 3.2 A, V

GS

= 0 V

0.8 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 125 V, V

GS

= 10 V, I

D

= 1.95 A

14 21

nCGate-Source Charge

Q

gs

2.8

Gate-Drain Charge

Q

gd

4.4

Gate Resistance

R

g

f = 1MHz 1.6 2.4 Ω

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= 125 V, R

L

= 1.25 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

10 15

ns

Rise Time

t

r

10 15

Turn-Off Delay Time

t

d(off)

21 35

Fall Time

t

f

12 20

Source-Drain Reverse Recovery Time

t

rr

I

F

= 3.2 A, dI/dt = 100 A/µs

65 100

Output Characteristics

0

1

2

3

4

5

6

7

8

012345

V

GS

= 10 thru 5 V

4 V

V

DS

- Drain-to-Source Voltage (V)

Drain Current (A)I

D

-

Transfer Characteristics

0

1

2

3

4

5

6

7

8

012345

25 °C

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

Drain Current (A)I

D

-

Document Number: 73133

S-83050-Rev. D, 29-Dec-08

www.vishay.com

3

Vishay Siliconix

Si7802DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.30

0.34

0.38

0.42

0.46

0.50

012345678

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 6 V

V

GS

= 10 V

0

2

4

6

8

10

0 3 6 9 12 15

V

DS

= 125 V

I

D

= 1.95 A

Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

-

V

SD

- Source-to-Drain Voltage (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T

J

= 25 °C

20

1

Source Current (A)I

S

-

T

J

= 150 °C

10

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

100

200

300

400

500

600

700

800

0 1020304050607080

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

0.0

0.5

1.0

1.5

2.0

2.5

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 1.95 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

0246810

I

D

= 1.95 A

SI7802DN-T1-GE3

SI7802DN-T1-GE3

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