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MJE5742G

P1-P3P4-P6
MJE5740, MJE5742
www.onsemi.com
4
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
OUTPUT WAVEFORMS
TEST CIRCUITS
CIRCUIT
VALUES
TEST WAVEFORMS
NOTE:
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
P
W
DUTY CYCLE ≤ 10%
t
r
, t
f
≤ 10 ns
68
1
k
0.001 mF
0.02 mF
1N493
3
270
+5 V
1
k
2N2905
47
1/2
W
100
-V
BE(off)
MJE20
0
T.U.T.
I
B
R
B
1N493
3
1N493
3
33
33
2N222
2
1
k
MJE21
0
V
CC
+5 V
L
I
C
MR826
*
V
clamp
*SELECTED FOR ≥ 1 kV
V
CE
5.1
k
51
+V
CC
R
C
SCOPE
-4 V
D
1
R
B
TUT
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200 mH/20 A
L
coil
= 200 mH
V
CC
= 30 V
V
CE(pk)
= 250 Vdc
I
C(pk)
= 6 A
V
CC
= 250 V
D1 = 1N5820 OR EQUIV.
I
C
V
CE
I
C(pk)
t
1
t
f
t
t
t
2
TIM
E
V
CE
OR
V
clamp
t
f
CLAMPED
t
1
ADJUSTED TO
OBTAIN I
C
t
1
≈
L
coil
(I
C
pk
)
V
CC
t
2
≈
L
coil
(I
C
pk
)
V
clamp
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
+10 V
25 ms
0
- 9.2 V
t
r
, t
f
< 10 ns
DUTY CYCLE = 1%
R
B
AND R
C
ADJUSTED
FOR DESIRED I
B
AND I
C
Table 1. Test Conditions for Dynamic Performance
MJE5740, MJE5742
www.onsemi.com
5
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T
C
= 25_C; T
J(pk)
is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
C
≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100 200 300 5000 400
16
5
10
8
1
0.02
100
I
C
, COLLECTOR CURRENT (AMPS)
0.1
10 20 200 400
3
0.5
50
0.3
0.05
dc
1ms
100 ms
MJE5742
MJE5740
V
BE(off)
≤ 5 V
T
J
= 100°C
6
CURVES APPLY BELOW RATED V
CEO
10 ms
MJE5742
MJE5740
5ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
t, TIME (s)μ
t, TIME (s)μ
I
C
, COLLECTOR CURRENT (AMPS)
0.5 0.7 1 2 10
7
5
2
1
0.7
0.2
0.3 5
0.5
10
3
3
0.3
0.2 7
I
C
, COLLECTOR CURRENT (AMPS)
0.5 0.7 1 2 10
0.7
0.5
0.2
0.1
0.07
0.02
0.3
Figure 8. Turn−On Time
5
0.05
1
Figure 9. Turn−Off Time
3
V
CC
= 250 V
I
B1
= I
B2
I
C
/I
B
= 20
t
s
t
r
t
f
t
d
V
CC
= 250 V
I
B1
= I
B2
I
C
/I
B
= 20
0.3
0.03
0.2 7
RESISTIVE SWITCHING PERFORMANCE
MJE5740, MJE5742
www.onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.024 0.36 0.61
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJE5740/D
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P1-P3P4-P6

MJE5742G

Mfr. #:
Buy MJE5742G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 8A 400V Bipolar Power NPN
Lifecycle:
New from this manufacturer.
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