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ZTX1056A

P1-P3P4-P4
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3  JANUARY 1995
FEATURES
*V
CEO
=160V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
200 V
Collector-Emitter Voltage V
CEO
160 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
3A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200 °C
ZTX1056A
C
B
E
E-Line
TO92 Compatible
ZTX1056A
Transient Thermal Resistance
Pulse Width
Derating curve
T -Temperature (°C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
A
mbi
e
nt
tempe
ratu
re
SPICE PARAMETERS
*ZETEX ZTX1056A Spice model Last revision 24/1/95
*
.MODEL ZTX1056A NPN IS=1.41E-12 NF=1.0 BF=600 IKF=2.0 VAF=120
+ ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=10
+ ISC=6.0E-10 NC=1.7 RB=0.1 RE=0.065 RC=0.015
+ CJC=53.1E-12 CJE=508.6E-12 MJC=0.461 MJE=0.350
+ VJC=0.461 VJE=0.679 TF=800E-12 TR=110E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
OBSOLETE - PLEASE USE ZTX855
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200 310 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CES
200 310 V
IC=100µA
Collector-Emitter
Breakdown Voltage
V
CEO
160 190 V IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
200 310 V
IC=100µA, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 8.8 V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.3 10 nA V
CB
=150V
Emitter Cut-Off Current I
EBO
0.3 10 nA V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3 10 nA VCES=150V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
95
175
220
60
140
250
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=100mA*
I
C
=3A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950 1050 mV I
C
=3A, I
B
=200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860 950 mV IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
250
60
30
420
450
400
120
50
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency f
T
120 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
14 25 pF V
CB
=10V, f=1MHz
Switching Times t
on
110 ns I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2450 ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX1056A
ZTX1056A
+25°C
1mA
I
C
-Collector Current
hFE v IC
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC
I
C
-Collector Current
1mA
VCE(sat) v IC
I
C
-Collector Current
10mA
1mA
100mA 1A 10A
I
C
-Collector Current
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
+100°C
+175°C
100
200
300
400
500
600
700
V
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.8
0.6
0.4
0.2
+25C
Ic/I
=15
Ic/I
=20
Ic/I
=50
V
=10V
Ic/I
=20
Ic/I
=20
- 55°C
10A
1A100mA10mA
10mA 100mA 1A
10A
100V10V
0.1V
1V
10
0.1
0.01
1
Single Pulse Test Tamb=25C
V
CE
- Collector VoltageI
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
OBSOLETE - PLEASE USE ZTX855
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200 310 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CES
200 310 V
IC=100µA
Collector-Emitter
Breakdown Voltage
V
CEO
160 190 V IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
200 310 V
IC=100µA, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 8.8 V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.3 10 nA V
CB
=150V
Emitter Cut-Off Current I
EBO
0.3 10 nA V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3 10 nA VCES=150V
Collector-Emitter
Saturation Voltage
V
CE(sat)
25
95
175
220
60
140
250
300
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=50mA*
I
C
=2A, I
B
=100mA*
I
C
=3A, I
B
=200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950 1050 mV I
C
=3A, I
B
=200mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
860 950 mV IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
250
60
30
420
450
400
120
50
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=2A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency f
T
120 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
14 25 pF V
CB
=10V, f=1MHz
Switching Times t
on
110 ns I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2450 ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX1056A
ZTX1056A
+25°C
1mA
I
C
-Collector Current
hFE v IC
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC
I
C
-Collector Current
1mA
VCE(sat) v IC
I
C
-Collector Current
10mA
1mA
100mA 1A 10A
I
C
-Collector Current
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
+100°C
+175°C
100
200
300
400
500
600
700
V
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.1
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.8
0.6
0.4
0.2
+25C
Ic/I
=15
Ic/I
=20
Ic/I
=50
V
=10V
Ic/I
=20
Ic/I
=20
- 55°C
10A
1A100mA10mA
10mA 100mA 1A
10A
100V10V
0.1V
1V
10
0.1
0.01
1
Single Pulse Test Tamb=25C
V
CE
- Collector VoltageI
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
OBSOLETE - PLEASE USE ZTX855
P1-P3P4-P4

ZTX1056A

Mfr. #:
Buy ZTX1056A
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Current
Lifecycle:
New from this manufacturer.
Delivery:
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