ZTX696B Datasheet ZTX696B, ZTX696BSTZ, ZTX696BSTOB | P1-P3

E-Line

TO92 Compatible

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FEATURES

* 180 Volt V

CEO

* Gain of 500 at I

C

=100mA

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Battery powered circuits

* Motor drivers

* Relay / solenoid drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

180 V

Collector-Emitter Voltage V

CEO

180 V

Emitter-Base Voltage V

EBO

5V

Peak Pulse Current I

CM

1A

Continuous Collector Current I

C

0.5 A

Practical Power Dissipation * P

totp

1.5 W

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/°C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

180 V

I

C

=100µA

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

180 V I

C

=10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

5V

I

E

=100µA

Collector Cut-Off Current I

CBO

0.1

µA

V

CB

=145V

Emitter Cut-Off Current I

EBO

0.1

µA

V

EB

=4V

Collector-Emitter Saturation

Voltage

V

CE(sat)

0.2

0.25

V

I

C

=50mA, I

B

=0.5mA*

I

C

=100mA, I

B

=2mA*

I

C

=200mA, I

B

=5mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9 V I

C

=200mA, I

B

=5mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

0.9 V I

C

=200mA, V

CE

=5V*

Static Forward Current

Transfer Ratio

h

FE

500

150

I

C

=100mA, V

CE

=5V*

I

C

=200mA, V

CE

=5V*

ZTX696B

3-247

ZTX696B

3-248

C

B

E

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

70 MHz I

C

=50mA, V

CE

=5V

f=50MHz

Input Capacitance C

ibo

200 pF V

EB

=0.5V, f=1MHz

Output Capacitance C

obo

6pFV

CE

=10V, f=1MHz

Switching Times t

on

t

off

80

4400

ns

I

C

=100mA, I

B!

=10mA

I

B2

=10mA, V

CC

=50V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

th(j-amb)2



R

th(j-case)

175

116

70

°C/W

 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

E-Line

TO92 Compatible

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FEATURES

* 180 Volt V

CEO

* Gain of 500 at I

C

=100mA

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Battery powered circuits

* Motor drivers

* Relay / solenoid drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

180 V

Collector-Emitter Voltage V

CEO

180 V

Emitter-Base Voltage V

EBO

5V

Peak Pulse Current I

CM

1A

Continuous Collector Current I

C

0.5 A

Practical Power Dissipation * P

totp

1.5 W

Power Dissipation at T

amb

=25°C

derate above 25°C

P

tot

1

5.7

W

mW/°C

Operating and Storage Temperature Range T

j

:T

stg

-55 to +200 °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

180 V

I

C

=100µA

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

180 V I

C

=10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

5V

I

E

=100µA

Collector Cut-Off Current I

CBO

0.1

µA

V

CB

=145V

Emitter Cut-Off Current I

EBO

0.1

µA

V

EB

=4V

Collector-Emitter Saturation

Voltage

V

CE(sat)

0.2

0.25

V

I

C

=50mA, I

B

=0.5mA*

I

C

=100mA, I

B

=2mA*

I

C

=200mA, I

B

=5mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

0.9 V I

C

=200mA, I

B

=5mA*

Base-Emitter

Turn-On Voltage

V

BE(on)

0.9 V I

C

=200mA, V

CE

=5V*

Static Forward Current

Transfer Ratio

h

FE

500

150

I

C

=100mA, V

CE

=5V*

I

C

=200mA, V

CE

=5V*

ZTX696B

3-247

ZTX696B

3-248

C

B

E

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

T

70 MHz I

C

=50mA, V

CE

=5V

f=50MHz

Input Capacitance C

ibo

200 pF V

EB

=0.5V, f=1MHz

Output Capacitance C

obo

6pFV

CE

=10V, f=1MHz

Switching Times t

on

t

off

80

4400

ns

I

C

=100mA, I

B!

=10mA

I

B2

=10mA, V

CC

=50V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

1

Junction to Ambient

2

Junction to Case

R

th(j-amb)1

R

th(j-amb)2



R

th(j-case)

175

116

70

°C/W

 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01 0.1 1 10

0.4

0.2

0

0.8

0.6

0.01 0.1 1 10

0.4

0.2

0

0.8

0.6

0.01 0.1 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1 1 10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01 0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

CE

(

s

at)

- (V

olts)

V

CE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

CE

(

sa

t

)

- (V

olts)

IC - Collector Current (Amps) IC - Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

IC - Collector Current (Amps)

V

BE(on)

v I

C

h

F

E

- No

r

mal

ised

Ga

i

n

V

BE

(

s

at)

- (V

olts)

V

BE

- (V

olts)

I

C

- Collector Current (Amps)

1.5K

1K

500

h

F

E

-

T

yp

i

cal Gain

VCE - Collector Voltage (Volts)

Safe Operating Area

1100010 100

0.001

0.01

0.1

1

Single Pulse Test at T

amb

=25°C

T

amb

=25°C

-55°C

+25°C

+100°C

+175°C

0

-55°C

+25°C

+100°C

+175°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

V

CE

=5V

I

C

/I

B

=50

I

C

/I

B

=50

V

CE

=5V

I

C

/I

B

=10

I

C

/I

B

=100

I

C

/I

B

=50

ZTX696B

3-249

ZTX696B

ZTX696B

Products related to this Datasheet