2N5555

2N5555 — N-Channel RF Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5555 Rev. 1.0.0 1
May 2008
2N5555
N-Channel RF Amplifier
This device is designed primarily for electronic switching applications such as low on resistance analog switching.
Sourced from process 50.
Absolute Maximum Ratings* T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
Drain-Gate Voltage 25 V
V
GS
Gate-Source Voltage -25 V
I
GF
Forward Gate Current 10 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
qJC
Thermal Resistance, Junction to Case 125 °C/W
R
qJA
Thermal Resistance, Junction to Ambient 357 °C/W
TO-92
1. Gate 2. Source 3. Drain
1
2N5555 — N-Channel RF Amplifier
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5555 Rev. 1.0.0 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width £ 300ms, Duty Cycle = 2%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage I
G
= 10mA, V
DS
= 0 -25 V
I
GSS
Gate Reverse Current V
GS
= 15V, V
DS
= 0, T = 25°C -1.0 nA
V
GS(off)
Gate-Source Cut-off Voltage V
DS
= 12V, I
D
= 10nA -2.5 9.5 V
V
GS(f)
Gate-Source Forward Voltage I
G
= 1.0mA 1 V
On Characteristics
*I
DSS
Zero-Gate Voltage Drain Current * V
DS
= 15V, V
GS
= 0 15 mA
RDS(on) Drain-Source On Resistance I
D
= 666mA, f = 1.0kHz 150 W
Small Signal Characteristics
Ciss Input Capacitance V
DS
= 15V, V
GS
= 0V, f = 1.0MHz 5 pF
Crss Reverse Transfer Capacitance V
DS
= 0V, V
GS
= 10V, f = 1.0MHz 1.2 pF
2N5555 N-Channel RF Amplifier2N5555
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5555 Rev. 1.0.0 3
Rev. I31
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx
®
Build it Now™
CorePLUS
CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK
®
Fairchild
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Fairchild Semiconductor
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®
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MicroFET™
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MillerDrive
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OPTOLOGIC
®
OPTOPLANAR
®
®
PDP-SPM™
Power220
®
Power247
®
POWEREDGE
®
Power-SPM™
PowerTrench
®
Programmable Active Droop™
QFET
®
QS™
QT Optoelectronics™
Quiet Series
RapidConfigure™
SMART START™
SPM
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise
®
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TinyBuck™
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®
TINYOPTO™
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TinyWire™
µSerDes™
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®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.

2N5555

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
JFET N-CH 25V 15mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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