UCLAMP3306P.TCT

4© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp3306P
Insertion Loss S21 - LtoL (I/O to I/O)
Insertion Loss S21 -LtoG (I/O to Pin 2)
2
3
4
1
START
.
030 MHz
3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -3.0155 dB
260 MHz
2: -7.4637 dB
900 MHz
3: -9.2053dB
1.8 GHz
4: -9.9280 dB
2.5 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
2
3
4
1
START
.
030 MHz
3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -3.0041 dB
532 MHz
2: -4.0655 dB
900 MHz
3: -6.1405dB
1.8 GHz
4: -8.0944 dB
2.5 GHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz
Crosstalk S21 (I/O to Pin 4)
START
.
030 MHz
3
STOP 000
.
000 000 MHz
CH1 S21 LOG 20 dB / REF 0 dB
5
© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp3306P
Device Connection Options
The μClamp3306P is designed to protect 6 signal lines
with an operating voltage of 0 to 3.3V. It will present a
high impedance to the protected line up to 3.3 volts. It
will “turn on” when the line voltage exceeds 3.5 volts.
The device is unidirectional and may be used on lines
where the signal polarity is above ground.
Pins 1, 2, 3, 4, 5, and 6 are connected to I/O signals.
The center tab is connected to system ground. All
signal lines and ground should be made with the lowest
impedance and inductance path as possible. This will
improve signal quality of the lines and keep the
clamping voltage as low as possible during a fast
transient.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional ava-
lanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
Applications Information
Figure 1 - Circuit Diagram
IPP
I
SB
I
PT
I
R
V
RWM
VV
PT
V
C
V
F
I
F
SB
Figure 3 - EPD TVS IV Characteristic Curve
Figure 2 - Layout Example
Center Tab (GND)
2
3
4
5
61
6© 2007 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp3306P
Figure 3 - μClamp3306P Spice Model
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TTces9-
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N--1.1
GEVe11.1
I/O
Applications Information - Spice Model

UCLAMP3306P.TCT

Mfr. #:
Manufacturer:
Semtech
Description:
TVS Diodes / ESD Suppressors 3.3V ESD PROTECTION ARRAY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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