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1N5832R

P1-P2
V
RRM
= 10 V - 30 V
I
F
= 40 A
Features
• High Surge Capability DO-5 Package
• Types up to 30V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
1N5832 thru 1N5834R
Silicon Power
Schottk
y
Diode
Conditions 1N5832 (R) 1N5833 (R) 1N5834 (R)
30
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
20 40
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 10 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 100 °C
Conditions
2114
1N5832 (R) 1N5833 (R)
1.5 1.5
V
R
= 10 V, T
j
= 125 °C
250 250 250
3020
-65 to 150
-65 to 175 -65 to 175 -65 to 175
20
1N5834 (R)
0.52
20 20
1.5
40 40 40
800 800 800
28
40
0.55 0.59
-65 to 150 -65 to 150
www.genesicsemi.com
1
1N5832 thru 1N5834R
www.genesicsemi.com
2
P1-P2

1N5832R

Mfr. #:
Buy 1N5832R
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 20V - 40A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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