Vishay Siliconix
SUM90N06-4m4P
www.vishay.com
2
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min.
Typ.
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
DS
= 0 V, I
D
= 250 µA
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
2.5 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 250 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V
70 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.0036 0.0044
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
0.0059 0.0077
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
60 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
6190
pFOutput Capacitance
C
oss
990
Reverse Transfer Capacitance
C
rss
340
Total Gate Charge
c
Q
g
V
DS
= 30 V, V
GS
= 10 V, I
D
= 85 A
105 160
nC
Gate-Source Charge
c
Q
gs
29
Gate-Drain Charge
c
Q
gd
28
Gate Resistance
R
g
f = 1 MHz 1.4 2.8
Tur n - O n D e l ay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.4
I
D
85 A, V
GEN
= 10 V, R
g
= 1
23 35
ns
Rise Time
c
t
r
15 25
Turn-Off Delay Time
c
t
d(off)
36 55
Fall Time
c
t
f
815
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
85
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
0.84 1.5 V
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/µs
61 100 ns
Peak Reverse Recovery Current
I
RM(REC)
3.0 4.5 A
Reverse Recovery Charge
Q
rr
91 140 µC
