STTH6006TV1 Datasheet STTH6006TV1 | P1-P3

May 2006 Rev 1 1/7

STTH6006TV

Turbo 2 ultrafast - high voltage rectifier

Main product characteristics

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces conduction and switching losses

■ Insulated voltage: 2500 V

RMS

■

Typical package capacitance: 45 pF

Description

The STTH6006TV1 uses ST Turbo2 600V

technology. This device is specially suited for use

in switching power supplies, and industrial

applications such as rectification and PFC boost

diode.

Order codes

I

F(AV)

2 x 30 A

V

RRM

600 V

T

j

150° C

V

F

(typ) 1.1 V

t

rr

(max) 50 ns

Part Number Marking

STTH6006TV1 STTH6006TV1

K2

K1

A2

A1

A2

K1

K2

STTH6006TV1

ISOTOP

Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

Repetitive peak reverse voltage 600 V

I

F(RMS)

RMS forward current 100 A

I

F(AV)

Average forward current, δ = 0.5 Per diode T

c

= 70° C 30 A

I

FSM

Surge non repetitive forward current t

p

= 10 ms Sinusoidal 210 A

T

stg

Storage temperature range -55 to + 150 °C

T

j

Maximum operating junction temperature

(1)

150 °C

1. thermal runaway condition for a diode on its own heatsink

dP

tot

dT

j

---------------

1

R

th j a–()

--------------------------<

www. st.com

Characteristics STTH6006TV

2/7

1 Characteristics

When the diodes are used simultaneously:

∆T

j(diode1)

= P

(diode1)

x R

th(j-c)

(per diode) + P

(diode2)

x R

th(c)

To evaluate the conduction losses use the following equation:

P = 1.07 x I

F(AV)

+ 0.011 I

F

2

(RMS)

Table 2. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

Junction to case

Per diode 1.6

° C/WTo tal 0 . 85

R

th(c)

Coupling 0.1

Table 3. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

I

R

(1)

1. Pulse test: t

p

= 5 ms, δ < 2 %

Reverse leakage current

T

j

= 25° C

V

R

= V

RRM

25

µA

T

j

= 125° C 80 800

V

F

(2)

2. Pulse test: t

p

= 380 µs, δ < 2 %

Forward voltage drop

T

j

= 25° C

I

F

= 30 A

1.85

V

T

j

= 150° C 1.10 1.40

Table 4. Dynamic characteristics

Symbol Parameter

Test conditions

Min. Typ Max. Unit

t

rr

Reverse recovery time

I

F

= 0.5 A, I

rr

= 0.25 A, I

R

= 1 A,

T

j

= 25° C

50

ns

I

F

= 1 A, dI

F

/dt = -50 A/µs,

V

R

= 30 V, T

j

= 25° C

50 70

I

RM

Reverse recovery current

I

F

= 30 A, dI

F

/dt = -100 A/µs,

V

R

= 400 V, T

j

= 125° C

811

t

fr

Forward recovery time

I

F

= 30 A dI

F

/dt = 100 A/µs

V

FR

= 1.1 x V

Fmax

, T

j

= 25° C

500 ns

V

FP

Forward recovery voltage

I

F

= 30 A dI

F

/dt = 100 A/µs

V

FR

= 1.1 x V

Fmax

, T

j

= 25° C

2.5 V

STTH6006TV Characteristics

3/7

Figure 1. Conduction losses versus

average current

Figure 2. Forward voltage drop versus

forward current

P(W)

0

5

10

15

20

25

30

35

40

45

50

55

0 5 10 15 20 25 30 35

T

δ

=tp/T

tp

I (A)

F(AV)

δ = 0.05

δ = 1

δ = 0.1

δ = 0.2

δ = 0.5

I (A)

FM

0

20

40

60

80

100

120

140

160

180

200

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0

T =150°C

(typical values)

j

T =150°C

(maximum values)

j

T =25°C

(maximum values)

j

V (V)

FM

Figure 3. Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 4. Peak reverse recovery current

versus dI

F

/dt (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03 1.E-02 1.E-01 1.E+00

Z/R

th(j-c) th(j-c)

t (s)

p

Single pulse

0

5

10

15

20

25

30

0 50 100 150 200 250 300 350 400 450 500

I (A)

RM

dI /dt(A/µs)

F

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

I =0.25 x I

FF(AV)

V =600V

T =125°C

R

j

Figure 5. Reverse recovery time versus

dI

F

/dt (typical values)

Figure 6. Reverse recovery charges versus

dI

F

/dt (typical values)

0

50

100

150

200

0 200 400 600 800 1000

t (ns)

rr

dI /dt(A/µs)

F

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =600V

T =125°C

R

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 200 400 600 800 1000

Q (nC)

rr

dI /dt(A/µs)

F

V =600V

T =125°C

R

j

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

F F(AV)

STTH6006TV1

STTH6006TV1

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