NTGS5120P, NVGS5120P
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
102
°C/W
Junction−to−Ambient – t = 5 s (Note 3)
R
q
JA
77.6
Junction−to−Ambient – Steady State (Note 4)
R
q
JA
200
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−60 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −48 V
T
J
= 25°C −1.0 mA
T
J
= 125°C −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V $100 nA
V
DS
= 0 V, V
GS
= ±20 V $200 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−1.0 −3.0 V
Drain−to−Source On Resistance R
DS(on)
V
GS
= −10 V, I
D
= −2.9 A 72 111 mW
V
GS
= −4.5 V, I
D
= −2.5 A 88 142
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −6.0 A 10.1 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= −30 V
942
pF
Output Capacitance C
OSS
72
Reverse Transfer Capacitance C
RSS
48
Total Gate Charge Q
G(TOT)
V
GS
= −10 V, V
DS
= −30 V;
I
D
= −2.9 A
18.1
nC
Threshold Gate Charge Q
G(TH)
1.2
Gate−to−Source Charge Q
GS
2.7
Gate−to−Drain Charge Q
GD
3.6
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= −10 V, V
DS
= −30 V,
I
D
= −1.0 A, R
G
= 6.0 W
8.7
ns
Rise Time t
r
4.9
Turn−Off Delay Time t
d(OFF)
38
Fall Time t
f
12.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −0.9 A
T
J
= 25°C −0.75 −1.0 V
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= −0.9 A
18.3 ns
Charge Time t
a
15.5 ns
Reverse Recovery Charge Q
RR
15.1 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
