CQ92-2M
CQ92-2N*
TRIAC
2.0 AMP, 600 THRU 800 VOLTS
TO-92 CASE
Central
Semiconductor Corp.
TM
R0 (22-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ92-2M
and CQ92-2N are epoxy molded silicon Triacs
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (T
C
=25°C unless otherwise noted)
SYMBOL CQ92-2M CQ92-2N* UNITS
Peak Repetitive Off-State Voltage V
DRM
600 800 V
RMS On-State Current (T
C
=50°C) I
T(RMS)
2.0 A
Peak One Cycle Surge (t=10ms) I
TSM
20 A
I
2
t Value for Fusing (t=10ms) I
2
t 2.0 A
2
s
Peak Gate Power (tp=10µs) P
GM
3.0 W
Average Gate Power Dissipation P
G (AV)
0.2 W
Peak Gate Current (tp=10µs) I
GM
1.2 A
Peak Gate Voltage (tp=10µs) V
GM
8.0 V
Storage Temperature T
stg
-40 to +150 °C
Junction Temperature T
J
-40 to +125 °C
Thermal Resistance Θ
JA
180 °C/W
Thermal Resistance Θ
JC
90 °C/W
ELECTRICAL CHARACTERISTICS: (T
C
=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
DRM
Rated V
DRM,
R
GK
=1KΩ 5.0 µA
I
DRM
Rated V
DRM,
R
GK
=1KΩ, T
C
=125°C 200 µA
I
GT
V
D
=12V, QUAD I, II, III 1.4 5.0 mA
I
GT
V
D
=12V, QUAD IV 3.8 8.0 mA
I
H
I
T
=100mA, R
GK
=1KΩ 1.2 5.0 mA
V
GT
V
D
=12V, QUAD I, II, III, IV 1.1 1.8 V
V
TM
I
TM
=2.0A, tp=380µs 1.50 1.75 V
V
TM
I
TM
=3.0A, tp=380µs 1.7 2.0 V
dv/dt V
D
=
2
/
3
V
DRM,
T
C
=125°C 2.5 V/µs
* Available on request. Please consult factory.