All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 05, 2018-07-02
PXAC201602FC
Package H-37248-4
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
Description
The PXAC201602FC is a 140-watt LDMOS FET for use in multi-
standard cellular power amplifier applications in the 1880 to 1920
MHz and 2010 to 2025 MHz frequency bands. It features input and
output matching, and a thermally-enhanced package with earless
flange. Manufactured with Wolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
Features
• Asymmetric Doherty design
- Main: 55 W Typ (P
1dB
)
- Peak: 85 W Typ (P
1dB
)
• Broadband internal matching
• Pulsed CW performance, 1960 MHz, 28 V
- Output power at P
1dB
= 100 W
- Gain = 18 dB
- Efficiency = 55%
• Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
• Can be operated with I
DQ
of up to 700 mA
(not to exceed maximum ratings limits)
RF Specifications
Single-carrier WCDMA Characteristics (tested in Wolfspeed Doherty test fixture)
V
DD
= 28 V, V
GS(PEAK)
= 1.4 V, I
DQ
= 360 mA, P
OUT
= 22.5 W average, ƒ = 2025 MHz, 3GPP WCDMA signal, channel band-
width = 3.84 MHz, 10 dB PAR @0.01% CCDF.
Characteristic Symbol Min Typ Max Unit
Gain G
ps
16.5 17.7 — dB
Drain Efficiency
h
D
41 44 — %
Adjacent Channel Power Ratio ACPR — –28 –26 dBc
Output PAR @ 0.01% CCDF 1880 MHz OPAR 7.0 — — dB
Output PAR @ 0.01% CCDF 2025 MHz OPAR 7.8 — — dB
-60
-40
-20
0
20
40
60
0
4
8
12
16
20
24
25 30 35 40 45 50
Efficiency (%)
Gain (dB), Peak/Average Ratio
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 360 mA, ƒ = 1880 MHz
3GPP WCDMA signal:
10 dB PAR, 3.84 MHz BW
Gain
Efficiency
PAR @ 0.01% CCDF
c201602fc-gr1a
PXAC201602FC
