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MT18JSF51272PZ-1G1D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 2GB
Values are for the MT41J256M4 DDR3 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
1710 1530 1350 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
2070 1890 1710 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
810 720 630 mA
Precharge quiet standby current I
DD2Q
1206 1080 954 mA
Precharge standby current I
DD2N
1260 1170 990 mA
Precharge standby ODT current I
DD2NT
1710 1530 1350 mA
Active power-down current I
DD3P
810 720 630 mA
Active standby current I
DD3N
1206 1116 1026 mA
Burst read operating current I
DD4R
4500 3600 2880 mA
Burst write operating current I
DD4W
4500 3960 3420 mA
Refresh current I
DD5B
4680 4320 3960 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
108 108 108 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
162 162 162 mA
All banks interleaved read current I
DD7
7200 5670 4500 mA
Reset current I
DD8
252 252 252 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM RDIMM
I
DD
Specifications
PDF: 09005aef8394fb39
js-z-f18c256_512x72pz.pdf - Rev. E 9/10 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
1710 1530 1350 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
1890 1800 1710 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
630 540 450 mA
Precharge quiet standby current I
DD2Q
720 630 540 mA
Precharge standby current I
DD2N
756 666 576 mA
Precharge standby ODT current I
DD2NT
900 810 720 mA
Active power-down current I
DD3P
720 630 540 mA
Active standby current I
DD3N
810 720 630 mA
Burst read operating current I
DD4R
2970 2610 2250 mA
Burst write operating current I
DD4W
3060 2790 2430 mA
Refresh current I
DD5B
3870 3600 3420 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
216 216 216 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
270 270 270 mA
All banks interleaved read current I
DD7
7830 6930 6030 mA
Reset current I
DD8
252 252 252 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM RDIMM
I
DD
Specifications
PDF: 09005aef8394fb39
js-z-f18c256_512x72pz.pdf - Rev. E 9/10 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 13: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
–
1.425 1.5 1.575 V
DC reference voltage V
REF
–
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
–
0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV
–
V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4
–
V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV
–
V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4
–
V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
–
V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0
–
0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350
–
V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out#
– –
TBD mA
Low-level output
current
I
OL
Err_Out# TBD
–
TBD mA
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 SDRAM RDIMM
Registering Clock Driver Specifications
PDF: 09005aef8394fb39
js-z-f18c256_512x72pz.pdf - Rev. E 9/10 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

MT18JSF51272PZ-1G1D1

Mfr. #:
Buy MT18JSF51272PZ-1G1D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
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