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AUIRFR5410TRL

P1-P3P4-P6P7-P9P10-P10
AUIRFR5410
V
DSS
-100V
R
DS(on)
max.
0.205
I
D
-13A
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-12-2
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V -13
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V -8.2
I
DM
Pulsed Drain Current -52
P
D
@T
C
= 25°C Maximum Power Dissipation 66 W
Linear Derating Factor 0.53 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy (Thermally Limited) 194
mJ
I
AR
Avalanche Current -8.4
A
E
AR
Repetitive Avalanche Energy 6.3 mJ
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
dv/dt Pead Diode Recovery dv/dt -5.0 V/ns
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case  ––– 1.9
°C/W
R
JA
Junction-to-Ambient ( PCB Mount) ––– 50
R
JA
Junction-to-Ambient ––– 110
D-Pak
AUIRFR5410
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
AUIRFR5410 D-Pak
Tube 75 AUIRFR5410
Tape and Reel Left 3000 AUIRFR5410TRL
G D S
Gate Drain Source
S
G
D
HEXFET
®
Power MOSFET
AUIRFR5410
2 2015-12-2
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 6.4mH, R
G
= 25, I
AS
= -7.8A (See fig. 12)
I
SD
-7.8A, di/dt 200A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
Pulse width 300
µs; duty cycle 2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact.

Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100 ––– ––– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.12 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.205

V
GS
= -10V, I
D
= -7.8A 
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V V
DS
= V
GS
, I
D
= -250µA
gfs Forward Trans conductance 3.2 ––– ––– S V
DS
= -25V, I
D
= -7.8A
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -100V, V
GS
= 0V
––– ––– -250 V
DS
= -80V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Charge ––– ––– 58
nC
I
D
= -8.4A
Q
gs
Gate-to-Source Charge ––– ––– 8.3 V
DS
= -80V
Q
gd
Gate-to-Drain Charge ––– ––– 32
V
GS
= -10V 
t
d(on)
Turn-On Delay Time ––– 15 –––
ns
V
DD
= -50V
t
r
Rise Time ––– 58 –––
I
D
= -8.4A
t
d(off)
Turn-Off Delay Time ––– 45 –––
R
G
= 9.1
t
f
Fall Time ––– 46 –––
R
D
= 6.2 
L
D
Internal Drain Inductance ––– 4.5 –––
nH
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 760 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 260 –––
V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 170 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– -13
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -52
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V T
J
= 25°C,I
S
= -7.8A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 130 190 ns
T
J
= 25°C ,I
F
= -8.4A
Q
rr
Reverse Recovery Charge ––– 650 970 nC
di/dt = 100A/µs
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
AUIRFR5410
3 2015-12-2
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTO M
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-4.5V
0.1
1
10
100
4 5 6 7 8 9 10
V = 10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-14A
P1-P3P4-P6P7-P9P10-P10

AUIRFR5410TRL

Mfr. #:
Buy AUIRFR5410TRL
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms
Lifecycle:
New from this manufacturer.
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